ROHM Semiconductor's BS2103F-E2 is a monolithic high and low side gate drive IC, which can drive high-speed power MOSFETs and IGBT drivers with bootstrap operation.

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration, which operates up to 600 V.

3.3 V and 5.0 V logic inputs can be used.

The under voltage lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.