STMicroelectronics' broad range of power bipolar transistors will give the user the perfect fit for their energy-efficient designs. The range includes Darlington transistors and BJTs with a VCES from 15 V to 1700 V.
Key features of ST's power bipolar transistors include the following:
- Fast switching times and very-low saturation voltage, resulting in reduced switching and conduction losses
- Integrated diode versions for reduced component count
- Well-controlled hFE parameter for increased reliability
- Best cost-performance ratio
- 15 V to 120 V BJTs based on the second generation of base island technology for improved VCE(SAT) and gain
- 150 V to 300 V dedicated parts featuring excellent gain linearity and pair matching for professional class AB audio amplifiers
- Very-high gain characteristics for reduced driving requirements
- Very-low saturation to minimize conduction losses
- High switching speed
- Wide portfolio of miniaturized SMD packages, including the latest PowerFlat™ 2 x 2 mm² package
View All of STMicroelectronics' Power Bipolar Transistors
