ADI’s HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). This device is a wideband and low noise amplifier (amp) for 2 GHz to 28 GHz frequency applications. The HMC7950 provides 15 dB of gain, 2.0 dB of noise figure, 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain compression, requiring 64 mA from a 5 V supply. The device comes in a -40°C to +85°C 16-LCC_HS package and is RoHS compliant.