Toshiba has developed the Gen-4 super-junction 600 V, 650 V, and 800 V DTMOS IV MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOS IV provides a 30% reduction in Ron·A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III. A reduction in Ron·A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies.
| Features |
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- 30% reduction in Ron·A compared to its (DTMOS III)
- Lower increase in on-resistance at high temperatures due to the use of a single epitaxial process
- 12% reduction in switching loss, Eoss, compared to the predecessor (DTMOS III) owing to a reduction in Coss
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- Available with a wide range of on-resistance, RDS(ON): 0.9 Ω to 0.018 Ω (max.)
- Various packaging options
- Through-hole: TO-220, TO-220SIS, IPAK, I2PAK, TO-3P(N), TO-3P(L), TO-247
- Surface-mount: DPAK, D2PAK
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| Applications |
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- Power supplies for communication equipment
- Servers
- UPS
- LCD TVs
- Desktop PCs
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- Adapters
- LED lighting
- Welders
- Printers
- Solar inverters
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