Gen-4 Super-Junction 600 V, 650 V, and 800 V DTMOS

Gen-4 Super-Junction 600 V, 650 V, and 800 V DTMOS

Toshiba has developed the Gen-4 super-junction 600 V, 650 V, and 800 V DTMOS IV MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOS IV provides a 30% reduction in Ron·A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III. A reduction in Ron·A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies.

Features
  • 30% reduction in Ron·A compared to its (DTMOS III)
  • Lower increase in on-resistance at high temperatures due to the use of a single epitaxial process
  • 12% reduction in switching loss, Eoss, compared to the predecessor (DTMOS III) owing to a reduction in Coss
  • Available with a wide range of on-resistance, RDS(ON): 0.9 Ω to 0.018 Ω (max.)
  • Various packaging options
    • Through-hole: TO-220, TO-220SIS, IPAK, I2PAK, TO-3P(N), TO-3P(L), TO-247
    • Surface-mount: DPAK, D2PAK
Applications
  • Power supplies for communication equipment
  • Servers
  • UPS
  • LCD TVs
  • Desktop PCs
  • Adapters
  • LED lighting
  • Welders
  • Printers
  • Solar inverters
Manufacturer