IXYS Corporation/Littelfuse features a 10 A / 4000 V, dual-channel, isolated gate-driver, the IXIDM1401_1505_O. Built using the IX6610 and IX6611 gate-driver chipset, it allows a 3.3 V microcontroller (MCU) through a 4 kV isolation barrier to control IGBTs and MOSFETs in the half-bridge configuration. The PWM signals can be as short as 500 ns and there is no lower limit on the switching frequency. It is capable of driving high-power IGBT and MOSFET modules rated up to 1700 V.

The IXIDM1401_1505_O gate-driver core can support switching frequencies up to 250 kHz. The two output channels are electrically isolated from each other and from the primary side. An internal power supply can provide up to 2 W per channel of isolated power to drive both upper and lower IGBTs (or MOSFETs), effectively isolating the MCU from the high power circuitry. Operating from a single polarity 15 V power source, it provides +15 V / -5 V and 10 A peak current to the IGBT gates as well as +3.3 V (at 50 mA) to the corresponding controlling MCU.

The IXIDM1401_1505_O provides a complete dual-channel, gate-driver solution, best in class, outperforming existing solutions. This product is designed with all the necessary features such as short-circuit protection, undervoltage and overvoltage lockout protection, advanced active clamping, and supply voltage monitoring. It is well suited for digital power control, where a typical MCU, like the Zilog line of MCUs, can be used to provide the brains for controlling power modules.

The IXIDM1401_1505_O gate-driver module enables a compact and low-profile design. It is well suited for such power conversion applications as inverters, isolated DC-DC converters, motor drives, uninterruptable power supplies (UPS), renewable energy, traction, and medical.