ON Semiconductor's NTMFS5H4xx and NTMFS5H6xx 40 V and 60 V power MOSFETs deliver RDS(ON) values as low as 0.8 mΩ, enabling significant conduction losses and improving overall operational efficiency levels. They also offer very low QG and input capacitance, ensuring driver losses are kept as low as possible. The devices are housed in a small footprint SO8FL package.
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- Small footprint SO8FL (5 x 6) package
- Sub mΩ RDS(ON) minimizing conduction loss
- 60 V: 1.3 mΩ @ 10 V (max) to 1.7 mΩ @ 4.5 V (max)
- 40 V: 1.1 mΩ @ 10 V (max) to 1.6 mΩ @ 4.5 V (max)
- Low QG and capacitance to minimize driver losses
- 60 V: 40 nC @ 4.5 VGS (typ) to 89 nC @ 10 VGS (typ)
- 40 V: 41 nC @ 4.5 VGS (typ) to 89 nC @ 10 VGS (typ)
- Further improved switching parameters
- 60 V: tRR 72 ns (typ)
- 40 V: tRR 59 ns (typ)
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- High efficiency DC-DC conversion
- Primary side MOSFET
- Secondary synchronous rectification
- Buck regulator
- High efficiency AC-DC conversion
- Secondary synchronous rectification
- Networking/telecom
- Servers
- AC adapters
- Handheld power tools
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