Diodes' DGD0506 and DGD0507 high-frequency gate-driver ICs are designed for driving two external N-channel MOSFETs in a half-bridge configuration featuring both high-side and low-side output drive capability with simple logic level input enabling an easy interface between the MCU and the power MOSFET switches. Supporting up to 50 V via a floating high-side suits a wide range of motor driving in battery-operated applications. Encompassing self-protection features, such as dead-time and matched delays to evade shoot-through issues, Schmitt- triggered inputs to avoid false triggering, gate drive tolerance to negative transients caused during high dv/dt switching, and undervoltage lockout (UVLO) protection on the V_cc supply to avoid malfunction under low supply voltage.

Features

• 1.8 A / 2.5 A source and sink current
  • Increasing system efficiencies by minimizing switching time of power MOSFETs
• Logic level input >2.5 V
  • PWM control directly from 3.3 V MCU while the output steps up to the V_cc supply (8 V to 14 V) to ensure the MOSFET is fully enhanced to reduce losses
• Shoot-through prevention logic
  • To protect the MOSFET from shoot-through, these gate drivers have matched delays and DGD0506 has a programmable deadtime from 70 ns to 420 ns
• 3 mm x 3 mm footprint
  • DFN3030 small form-factor that integrates a bootstrap diode to reduce component count for space- and weight-constrained applications

Applications

• Motor drive - brushless DC (BLDC) motor driving up to 50 V, especially in battery operated applications:
  • Cordless power tools including drills, hand vacuum cleaners and blenders
  • Drones, RC cards, and planes
  • Fans, e-cigarettes