The introduction of EPC's Gen 5 technology is a quantum leap into a new universe of performance. This latest generation technology cuts the size of the Gen 4 eGaN FET in half but triples their performance. This reduction in cost and improvement in performance creates a “virtuous cycle” that is expanding the gap in both performance and cost between eGaN FETs and ICs and the aging power MOSFET.

Video:  GaN takes another quantum leap in performance over silicon

Features

• Small footprint - huge performance gains
  • At 100 V the eGaN FETs have a 4 times advantage in R_DS(ON) x die area vs. state-of-the-art silicon MOSFETs
  • At 200 V this advantage jumps to a 16 times advantage
• Improved figure of merit (FOM)
  • The latest generation of eGaN FETs provides a four times advantage over silicon at 100 V and an 8 times advantage at 200 V for improved switching performance in high frequency power conversion applications
• Application benefit from performance gains
  • In an example case using the 100 V EPC2045, a 30 percent reduction in power loss with a 2.5 percentage points better efficiency than the best comparable MOSFET was achieved in a 48 V to 5 V circuit operating at 500 kHz switching frequency