Texas Instruments' LMG5200 device, an 80 V, 10 A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80 V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance C_ISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm x 8 mm x 2 mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the V_CC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. When used with the TPS53632G controller, the LMG5200 enables direct conversion from 48 V to point-of-load voltages (0.5 V to 1.5 V).