Schottky Diodes in CSP and DFN Packages

By Diodes Incorporated 52

Schottky Diodes in CSP and DFN Packages

Diodes announces a range of Schottky diodes in minuscule CSP and DFN packages. These small packages facilitate varied applications, such as blocking, electrical over-stress, and boost-strap diodes, in many battery-powered products, such as IoT wearables, smartphones, and virtual/augmented reality headsets. Many of these Schottky diodes in CSP and DFN packages are also qualified to AEC-Q101 standards and are supported by the PPAP process.

Features

  • Minuscule packages and robustness
    • These ultra-low profile and small footprint surface mountable packages enable compact form-factors of the adopting end systems. Freeing of bond-wires inside the CSP package and the support of PPAP ensure long-term reliability
  • Low forward voltage
    • With the maximum forward voltage (VF) as low as 0.35 V, these CSP/DFN packaged Schottky diodes enable very low conduction losses to be realized. This results in lower operating temperatures and excellent long-term reliability
  • Low leakage current
    • The low leakage current (IR) translates to low ambient temperature when the system is on standby mode. In battery-powered systems, the standby time is significantly extended
  • Wide range of reverse breakdown voltages and output currents
    • These devices offer a comprehensive range of reverse breakdown voltages (VBR_MIN = 20 V to 70 V) and output currents (IO_MAX = 70 mA to 2 A), meeting the expectation of many applications with demanding requirements
Applications
  • Industrial robotics
  • IoT (Internet of Things)
  • Infotainment/ADAS
  • Portable electronics
  • Mobile computing
  • Mobile communications
  • VR/AR headsets

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