55 V, N-Channel Trench MOSFET

By Nexperia 170

55 V, N-Channel Trench MOSFET

Nexperia offers their N-channel, enhancement-mode field-effect transistor (FET) in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.

Benefits
  • Electrostatic-discharge (ESD) protection more than 3 kV HBM
  • Trench MOSFET technology
  • Low threshold voltage
  • Very-fast switching
Applications    
  • Relay drivers
  • High-speed line drivers
 
  • Low-side load switches
  • Switching circuits

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