60 V, N-Channel Trench MOSFET

By Nexperia 83

60 V, N-Channel Trench MOSFET

Nexperia's BSN20BKR is an N-channel, enhancement-mode field-effect transistor (FET) in a small, SOT23 (TO-236AB), surface-mounted device (SMD), plastic package using trench MOSFET technology.

Benefits
  • Logic-level compatible
  • Electrostatic-discharge (ESD) protection of 2 kV HBM
  • Very-fast switching
  • Trench MOSFET technology
Applications
  • High-speed line drivers
  • Low-side load switches
  • Relay drivers
  • Switching circuits

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