Diodes' DPS1113 integrates two N-MOSFET switches with very low R_DS(ON) at ≤ 30 mΩ. To ensure system integrity, the device hosts comprehensive fault detection and recovery mechanism such as input undervoltage lock-out, reverse voltage and current blocking, thermal shut-down, overcurrent, and short-circuit protection. Other system friendly features include adjustable dv/dt, current, and voltage limit, as well as current monitor output and port discharge through the built-in 115 Ω resistor. Operating at an input voltage of 5 V_DC, the output port can withstand reverse voltages up to 30 V maximum. The DPS1113 is packaged in a lead, halogen, and antimony free QFN package which is fully RoHS compliant. The 0.8 mm low-profile height and 4 mm x 4 mm footprint allow the device to be easily incorporated into your system.

Features

• Low ON-state resistance and thermally efficient QFN4040 package
  • The low on-state resistance (R_{DS(ON)_TYP} ≤ 30 mΩ @ V_IN = 4.5 V to 5.5 V) enables maximum continuous current up to 3.5 A. The thermally efficient QFN4040-17 package ensures sufficiently low surface temperature during operation
• Adjustable features for usability and flexibility
  • Through external resistors, many parameters can be adjusted: ramp-up speed of output voltage, overcurrent limit, and overvoltage limit
• Comprehensive protection and recovery mechanisms
  • To protect the device and the system from possible fault, the comprehensive mechanism comprises of input undervoltage lock-out, reverse voltage and current blocking, thermal shut-down, overcurrent, and short-circuit protection
• Fast role swap (FRS) support
  • The N-MOSFET switch is guaranteed to turn on within the tSrcFRSwap time so that V_BUS is at V_SAFE5V voltage level per the requirement of the USB PD 3.0