The Vishay Siliconix p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs; down to half of the industry's previous best.
Lowest on-resistance per area enables the smallest PCBs
Lower voltage drops increase efficiency and battery run time
Dual devices offer the potential for a reduced component count in typical battery charger designs
With a variety of package sizes and on-resistance ratings, the Vishay p-channel TrenchFET GEN III and IV MOSFETs accommodates a wide range of applications. Moreover, the low on-resistance enables low conduction losses to save power and extend battery usage per charge.
Resources: P-Channel MOSFETs in a Nutshell
| Features |
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- Lowest on-resistance per area achieved for a p-channel MOSFET; down to half of the industry's previous best
- Down to below 2 mΩ in SO-8 footprint area
- Low conduction losses save power in battery operated systems
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- Variety of package sizes, from PowerPAK® SO-8 down to 1.6 mm x 1.6 mm PowerPAK SC-75 and 0.8 mm x 0.8 mm chip scale MICRO FOOT®
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| Applications |
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- Battery powered equipment
- Notebooks/tablets
- Game consoles
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- Consumer electronics
- Wearables
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