Silicon Carbide (SiC) Schottky Diodes

By ON Semiconductor 90

Silicon Carbide (SiC) Schottky Diodes

ON Semiconductor's silicon carbide (SiC) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor offers 650 V and 1200 V devices in a range of current and package options that push the envelope in terms of efficiency and power density for next-generation power system designs.

Features Applications
  • No reverse QRR recovery, no forward recovery
  • Low VF (lower conduction losses)
  • Leakage stability over temperature range
  • Switching characteristics independent of temperature
  • Higher surge and avalanche capacity
  • Positive temperature coefficient
  • Higher operating temperature (TJMAX=175ºC)
  • Solar photovoltaic inverters (PV)
  • Power factor correctors (PFC)
  • Electric/hybrid vehicle chargers
  • Uninterruptible power supplies (UPS)
  • Telecom and server power supplies

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