These STx8N120K5 1,200 V, 2 Ω (maximum), 6 A MOSFETs complete STMicroelectronics' portfolio of very high-voltage MOSFETs fully developed using ST’s proprietary MDmesh K5 super-junction technology for an improved power density and higher efficiency.

Thanks to their very low R_DS(on) and best-in-class gate charge (Q_g) for ease of use and efficient designs, ST's MDmesh K5 MOSFETs are well-suited for flyback converters in metering, telecom, on-board charger, and 3-phase auxiliary power supply applications.