STMicroelectronics' PWD5F60 high-density power driver is an advanced power system-in-package integrating gate drivers and four N-channel power MOSFETs in a dual half-bridge configuration. The integrated power MOSFETs have R_DS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate driver's high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.

The PWD5F60 accepts a supply voltage (V_CC) that extends over a wide 10 V to 20 V range. They feature UVLO protection on both the lower and upper driving sections, which prevents the power switches from operating in low efficiency or dangerous conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units, or Hall effect sensors.

The PWD5F60 embeds two uncommitted comparators available for protections against overcurrent, overtemperature, and more. The PWD5F60 operates in the industrial temperature range of -40°C to +125°C.