The 200 V Ultra Junction X3-Class HiPerFET™ MOSFETs from IXYS Corporation/Littelfuse have current ratings ranging from 36 A to 300 A. A broad selection of devices are available in a number of international standard packages.

Fabricated using a charge compensation principle and IXYS/Littelfuse's own process technology, these MOSFETs exhibit the lowest on-state resistances currently in the industry (3.5 milliohms in the SOT-227 package and 4 milliohms in the TO-264, for example). Along with gate charges as low as 21 nanocoulombs, these devices enable high power densities and energy efficiencies in a wide variety of high-speed power conversion applications.

The fast body diodes of the devices are optimized and have low reverse recovery charge and time, thereby suppressing transients and enabling low-noise, high-efficiency power switching. In addition, these MOSFETs are avalanche capable and exhibit a superior dv/dt performance (up to 20 V/ns).

Targeted applications include synchronous rectification, battery chargers for light electric vehicles (LEVs), motor control (48 V to 110 V systems), DC-DC converters, uninterruptible power supplies, electric forklifts, inverters, power solid state relays, and Class-D audio amplifiers.