Navitas GaNFast power ICs have an easy-to-use digital input, power output, and high-frequency powertrain. The monolithic integration of a field-effect transistor (FET), drive, and logic creates a high-performance building block enabling designers to create a fast, small, and efficient integrated powertrain.

The high dV/dt immunity, high-speed integrated drive, and industry standard low-profile, low-inductance, 5 mm x 6 mm SMT QFN package allow designers to exploit Navitas' gallium nitride (GaN) technology with simple, quick, and dependable solutions for breakthrough power density and efficiency. These ICs extend the capabilities of traditional topologies including flyback, half-bridge, resonant, and more to MHz+, enabling the commercial introduction of breakthrough designs.