Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN possesses superior properties compared to silicon or gallium arsenide counterparts which include higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT also provides greater power density and wider bandwidths compared to Si and GaAs transistors. The CMPA5585030F comes in a 10-lead metal/ceramic flanged package for optimal electrical and thermal performance.