HMC637 Gallium Arsenide Power Amplifiers

HMC637 Gallium Arsenide Power Amplifiers

ADI’s HMC637 is a gallium arsenide (GaAs) cascode distributed power amplifier. This device is a monolithic microwave integrated circuit (MMIC) and contains a pseudomorphic high electron mobility transistor (pHEMT). This power amplifier is self-biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and second-order intercept (IP2) and third-order intercept (IP3) optimization. The amplifier operates from dc to 7.5 GHz, providing 15.5 dB of small signal gain, 28 dBm output power at 1 dB gain compression, a typical output IP3 of 39 dBm, and a 3.5 dB noise figure, while requiring 345 mA from a 12 V supply voltage (VDD). Gain flatness is excellent from dc to 7.5 GHz at ±0.5 dB typical, making the HMC637 ideal for aviation, industrial and test equipment applications. The HMC637 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, housed in a RoHS compliant, 5 mm × 5 mm, lead frame chip scale package (LFCSP).

Features
  • P1dB output power: 28 dBm typical
  • Gain: 15.5 dB typical
  • Output IP3: 39 dBm typical
  • Self-biased at VDD = 12 V at 345 mA typical
    • Optional bias control on VGG1 for IDQ adjustment
    • Optional bias control on VGG2 for IP2 and IP3 optimization
  • 50 Ω matched input/output
  • 32-lead, 5 mm × 5 mm LFCSP package: 25 mm²
Applications
  • Test and instrumentation
  • Industrial
  • Aviation
  • Base stations
Manufacturer