TSC's 40 V and 60 V N-Channel MOSFET families feature a junction temperature rated to 175°C suited for high-temperature environment applications. These devices offer logic or standard gate threshold voltage levels and a wide range of drain-source on-state resistance (RDS(ON)) levels for flexible and robust power switching designs. Gate-drain charge/gate-source charge (Qgd/Qgs) and the reverse recovery charge (Qrr) parameters have been optimized to improve figure of merit and reduce EMI, and offer higher surge current capability during cold load start-up and in-rush. The MOSFETs are packaged in a small form factor PDFN56 package for improved power density in application.
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