Enhancement-mode monolithic half-bridge GaN transistors from EPC further widen the efficiency gap between eGaN^® technology and traditional silicon. Monolithic half-bridge devices save space, improve efficiency, and lower system costs.

Increase Efficiency - Monolithic half-bridge devices eliminate interconnect inductances for higher efficiency – especially at higher frequencies.

Save Board Space - Monolithic devices save 60% of power stage real-estate on the PCB.

Simplifying GaN - Monolithic devices increase manufacturing efficiencies while reducing assembly costs.