Excelon™ Ferroelectric-RAM (F-RAM™)

By Cypress Semiconductor Corp 47

Excelon™ Ferroelectric-RAM (F-RAM™)

Cypress Semiconductor’s Excelon is next-generation Ferroelectric RAM (F-RAM) which delivers the industry’s lowest-power mission-critical nonvolatile memory by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility, and unlimited read/write cycle endurance. This makes Excelon the ideal data-logging memory for portable medical, wearable, IoT sensor, industrial, and automotive applications.

Features

  • Up to 150x reduction in typical standby current (1 µA) and hibernate current (0.1 µA) compared to current F-RAMs
  • Greater than 10x increase in performance with the addition of a 108 MHz QSPI compared to competing SPI F-RAMs
  • Offers NoDelay™ writes to capture data instantly with no soak time requirement and without any additional components for power back-up
  • 2 Mb, 4 Mb, and 8 Mb density options
  • Operating voltage range: 1.71 V to 1.89 V and 1.80 V to 3.60 V
  • Commercial (0°C to +70°C), industrial (-40°C to +85°C), Auto-A (-40°C to +85°C), and Auto-E (-40°C to +125°C) temperature grades
Excelon-Auto for automated driver assist systems
  • Captures data instantly with no soak time requirement and also no additional back-up components
  • Supports endurance cycling of 1,000 trillion write cycles to log data every µs for 20 years
  • Provides AEC-Q100-qualified and functional safety-compliant memory components
  • Example application: Enabling instant and reliable data capture in ADAS vision systems

Brochure: Excelon Auto F-RAM Memory

Categories

Top