150 V N-Channel X4-Class Ultra-Junction Power MOSF

By IXYS 48

150 V N-Channel X4-Class Ultra-Junction Power MOSF

IXYS, now part of Littelfuse, introduces a power semiconductor device developed using a charge compensation principle and proprietary process technology, resulting in a power MOSFET that significantly reduces on-resistance [RDS(ON)] and gate charge (Qg). A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low Qg results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. The positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

Features
  • Low RDS(ON) and Qg
  • dv/dt ruggedness
  • Avalanche capability
  • International standard packages
Applications
  • Synchronous rectification in switching power supplies
  • Motor control (48 V to 80 V systems)
  • DC-DC converters
  • Uninterruptible power supplies
  • Electric forklifts
  • Class-D audio amplifiers
  • Telecom systems

Categories

Top