IXYS, now part of Littelfuse, introduces a power semiconductor device developed using a charge compensation principle and proprietary process technology, resulting in a power MOSFET that significantly reduces on-resistance [R_DS(ON)] and gate charge (Q_g). A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low Q_g results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. The positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.