Alliance Memory's high-speed CMOS pseudo SRAMs (PSRAMs) combine the most desirable features of SRAMs and DRAMs to provide designers with easy-to-use, low-power, and cost-effective memory solutions. Featuring high-density DRAM cores with SRAM interfaces and on-chip refresh circuits for refresh-free operation, the devices provide the high bandwidth and the low power necessary to replace SRAMs in portable electronics such as mobile phones and PDAs, or to serve as companion chips to burst NOR Flash applications.
Features
- Wide range of densities available:
- 8 Mb, 16 Mb, and 32 Mb devices featuring interfaces compatible with asynchronous type SRAM
- 64 Mb and 128 Mb CellularRAM PSRAMs featuring a multiplexed address/data bus for greater bandwidth
- Offered in 6.0 mm x 7.0 mm x 1.0 mm 48-ball FPBGA and 4.0 mm x 4.0 mm x 1.0 mm 49-ball FPBGA packages
- Support asynchronous and burst operation
- Feature read or write burst lengths of 4, 8, 16, or 32 words, or continuous burst
- Available in industrial temperature ranges of -30°C to +85°C and -40°C to +85°C
- Fast access speeds of 70s
- Operate from a single power supply of 1.7 V to 1.95 V or 2.6 V to 3.3 V
- Power-saving features:
- Auto temperature-compensated self-refresh (ATCSR)
- Partial array self-refresh (PASR)
- Deep power down (DPD) mode
