ROHM’s silicon carbide (SiC) MOSFETs are available in a range of current ratings and packages. They come in a variety of ON resistances and voltage (V_DSS) ratings of 650 V, 1,200 V, or 1,700 V. Unlike IGBTs there is no tail current during turn-off resulting in faster operation and reduced switching loss. Also, unlike silicon devices, the ON resistance remains relatively constant even at high temperatures, minimizing conduction losses. Both 2nd generation planar with maximum short-circuit withstand time and 3rd generation trench with reduced input capacitance and lower gate charge models are offered. Bare dies up to 1,700 V are also available.