Vishay's 60 V TrenchFET Gen IV n-channel power MOSFET is the industry’s first MOSFET to be optimized for standard gate drives by delivering maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3 mm by 3.3 mm PowerPAK 1212-8S package. Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN features a low QOSS and gate charge of 22.5 nC.
Features
- Maximum on-resistance down to 4 mΩ at 10 V minimizes conduction losses
- Low QOSS of 34.2 nC and gate charge of 22.5 nC reduce power losses from switching
- Offered in compact 3.3 mm by 3.3 mm PowerPAK® 1212-8S package
- 100% RG- and UIS-tested, RoHS-compliant, and halogen-free
Applications
- Synchronous rectification in AC/DC and DC/DC topologies
- Primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies
- Motor drive control and circuit protection in power tools and industrial equipment
- Battery protection and charging in battery management modules
