Vishay Siliconix introduces Si8817DB P-Channel 20 V MOSFET for power management applications for portable electronics.
By Vishay/Siliconix 62
Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
By Vishay/Siliconix 86
Vishay introduces a 1.4 mm by 1.8 mm miniQFN10 package with an ultra-thin 0.35 mm profile, providing a space-saving alternative to larger miniQFN10 and WCSP devices.
By Vishay/Siliconix 34
Vishay Siliconix introduces their SQJ200EP and SQJ202EP AEC-Q101 qualified 12 V and 20 V MOSFETs in a dual asymmetric package for synchronous buck applications.
By Vishay/Siliconix 32
Vishay has extended the offering of 600 V and 650 V E series power MOSFETs with three n-channel devices in the compact PowerPAK SO-8L package.
By Vishay/Siliconix 98
Vishay's SiR638DP offers a best-in-class combination of RDS(ON) and output capacitance (Coss), for reduced system power losses.
By Vishay/Siliconix 102
The Vishay Siliconix SiA468DJ provides the industry’s lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages.
By Vishay/Siliconix 138
Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
By Vishay/Siliconix 98
Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
By Vishay/Siliconix 102
Vishay Siliconix's SiC46 high efficiency synchronous buck regulators with integrated high-side and low-side power MOSFETs.
By Vishay/Siliconix 112
The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
By Vishay/Siliconix 100
Vishay's SUM90142E-GE3 N-Channel 200 V (D-S) ThunderFET® MOSFET features a maximum 175°C junction temperature.
By Vishay/Siliconix 90
Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
By Vishay/Siliconix 96
Vishay's DG3257 is ideal for analog and digital signal switching in portable consumer and medical devices, and achieves low resistance of 5 Ω at 4.2 V.
By Vishay/Siliconix 128
Vishay’s SiC43x family features minimum external components with two resistors to set soft start, switching frequency, ILIMIT, and operating mode.
By Vishay/Siliconix 492
Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
By Vishay/Siliconix 116
Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
By Vishay/Siliconix 135
Vishay’s DG4157E is a high-performance single-pole, double-throw (SPDT) analog switch designed for 1.65 V to 5.5 V operation with a single power rail.
By Vishay/Siliconix 128
Vishay's SiP32431 and SiP32432 are ultra-low leakage and quiescent current slew rate controlled high side switches with reverse blocking capability.
By Vishay/Siliconix 437
The 4th-generation SiHH068N60E 600 V E series MOSFET is built on Vishay's latest energy-efficient E Series superjunction technology.
By Vishay/Siliconix 80