SUM90140E-GE3

Mfr. #:: SUM90140E-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
Lifecycle:: New from this manufacturer.
Datasheet:: SUM90140E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SUM90140E-GE3 Datasheet SUM90140E-GE3 Datasheet (P4-P6)SUM90140E-GE3 Datasheet (P7-P9)
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More Information:: SUM90140E-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 90 A

Rds On - Drain-Source Resistance:: 13.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 96 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 375 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: ThunderFET

Packaging:: Tube

Series:: SUM

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 75 S

Fall Time:: 80 ns

Product Type:: MOSFET

Rise Time:: 112 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 35 ns

Typical Turn-On Delay Time:: 13 ns

Unit Weight:: 0.077603 oz

Tags: SUM9, SUM

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SUM90140E-GE3 Description

***el Electronic: VISHAY SUM90140E-GE3 MOSFET Transistor, N Channel, 90 A, 200 V, 0.0138 ohm, 10 V, 4 VNew

***ure Electronics: N-Channel 200 V 17 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263

***ical: Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK

***ment14 APAC: MOSFET, N-CH, 200V, 90A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Source Voltage Vds:200V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: MOSFET, N-CH, 200V, 90A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 200V, 90A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

***(Formerly Allied Electronics): SUM65N20-30-E3 N-channel MOSFET Transistor; 65 A; 200 V; 2+Tab-Pin TO-263

***ure Electronics: SUM65N20 Series 200 V 65 A 30 mOhm Surface Mount N-Channel Mosfet - D2PAK-3

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 200V 65A D2PAK

***nsix Microsemi: Power Field-Effect Transistor, 65A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: N CHANNEL MOSFET, 200V, 65A, TO-263; Tra; N CHANNEL MOSFET, 200V, 65A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***nell: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Max Repetitive Avalanche Energy:61mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:5100pF; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V

***ure Electronics: IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263

***ical: Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK

***ark: N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 74W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D2-PAK; Current Id Max: 9A; Junction to Case Thermal Resistance A: 1.7°C/W; On State resistance @ Vgs = 10V: 300mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 36A; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***emi: N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ

***roFlash: N-Channel 200 V 27 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3

***Yang: Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):22.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:D2-PAK; Power Dissipation Pd:260W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***ure Electronics: Single N-Channel 150 V 7.2 mOhm 70 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 150V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS

***ment14 APAC: MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 150 V 10.8 mOhm 41 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 150V, 83A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Source Voltage Vds:150V; On Resistance

***icontronic: Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 150V, 83A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 83A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0091ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: N-Channel 250 V 42.5 mohm Surface Mount PowerTrench Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

***Yang: Trans MOSFET N-CH 250V 50A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:50A; Drain Source Voltage, Vds:250V; On Resistance, Rds(on):0.363ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V

***el Electronic: Chip Resistor - Surface Mount 499Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 499 OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N, SMD, TO-263; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:50A; Resistance, Rds On:0.0363ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; No. of Pins:2; Power Dissipation:260W; Voltage, Vds Max:250V; Voltage, Vgs th Max:5V

SUM90140E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Part #	Mfg.	Description	Stock	Price
SUM90140E-GE3 DISTI # V72:2272_14664661	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK	42	25:$2.2820 10:$2.5360 1:$3.3616
SUM90140E-GE3 DISTI # V36:1790_14664661	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK	0	800000:$1.5000 400000:$1.5020 80000:$1.6450 8000:$1.8790 800:$1.9170
SUM90140E-GE3 DISTI # SUM90140E-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 200V 90A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	605In Stock	100:$2.3198 10:$2.8310 1:$3.1500
SUM90140E-GE3 DISTI # SUM90140E-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 200V 90A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	605In Stock	100:$2.3198 10:$2.8310 1:$3.1500
SUM90140E-GE3 DISTI # SUM90140E-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 200V 90A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	5600:$1.4784 2400:$1.5361 1600:$1.6170 800:$1.9173
SUM90140E-GE3 DISTI # 27129248	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK	42	5:$3.3616
SUM90140E-GE3 DISTI # SUM90140E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: SUM90140E-GE3) RoHS: Not Compliant Min Qty: 800 Container: Reel	Americas - 0	3200:$1.3900 4800:$1.3900 8000:$1.3900 1600:$1.4900 800:$1.5900
SUM90140E-GE3 DISTI # SUM90140E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin TO-263 T/R (Alt: SUM90140E-GE3) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€1.3900 4800:€1.4900 3200:€1.6900 1600:€1.9900 800:€2.8900
SUM90140E-GE3 DISTI # 86Y1093	Vishay Intertechnologies	MOSFET, N-CH, 200V, 90A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0138ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	3394	250:$2.0500 100:$2.1200 50:$2.2700 25:$2.4200 10:$2.5800 1:$3.1100
SUM90140E-GE3 DISTI # 78-SUM90140E-GE3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant	4587	1:$3.0800 10:$2.5500 100:$2.1000 250:$2.0300 500:$1.8200 1000:$1.5300 2500:$1.4600 5000:$1.4000
SUM90140E-GE3 DISTI # 1807420	Vishay Intertechnologies	N-CH MOSFET D2PAK 200V17MOHM @ 10V, RL	780	2400:£1.3600 800:£1.4000
SUM90140E-GE3 DISTI # 2576515	Vishay Intertechnologies	MOSFET, N-CH, 200V, 90A, TO-263-3 RoHS: Compliant	3394	250:$3.0600 100:$3.1600 10:$3.8400 1:$4.6400
SUM90140E-GE3 DISTI # 2576515	Vishay Intertechnologies	MOSFET, N-CH, 200V, 90A, TO-263-3	3024	500:£1.4600 250:£1.5800 100:£1.6300 10:£1.9900 1:£2.7000
SUM90140E-GE3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs D2PAK (TO-263)	Americas -

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SUM90140E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes