NGTB25N120SWG

Mfr. #:: NGTB25N120SWG
Manufacturer:: ON Semiconductor
Description:: IGBT 25A 1200V TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB25N120SWG Datasheet
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HTML Datasheet:: NGTB25N120SWG Datasheet NGTB25N120SWG Datasheet (P4-P5)
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Tags: NGTB25, NGTB2, NGTB, NGT

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NGTB25N120SWG Description

***ark: Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

*** Source Electronics: Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3

***ure Electronics: IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1

***ource: IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A

***ment14 APAC: IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube

***Parts: IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole

***ure Electronics: N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247

***nell: IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins

***ark: Igbt Single Transistor, 40 A, 2.2 V, 341 W, 1.2 Kv, To-247, 3

***ical: Trans IGBT Chip N-CH 1200V 40A 341000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 40A, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 341W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail

***inecomponents.com: 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

***ure Electronics: HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247

***ment14 APAC: IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W

***rchild Semiconductor: HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ource: 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨

*** Source Electronics: Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247

***ure Electronics: HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247

***ment14 APAC: IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***rchild Semiconductor: HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ical: Trans IGBT Chip N-CH 1200V 50A 326000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***Parts: IGBTs - Single, Transistors N-Channel, PG-TO247-3 50A 1200V 326W Through Hole

***ure Electronics: IKW25N120H3 Series 1200 V 25 A Through Hole TRENCHSTOP IGBT -PG-TO247-3

***ineon SCT: 1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ark: Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:326W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Transistor Mounting:through Hole; Msl:- Rohs Compliant: Yes

***nell: IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:326W

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding inverters; Solar inverters; UPS; All hard switching applications

Market price

Part #	Mfg.	Description	Stock	Price
NGTB25N120SWG DISTI # V99:2348_07311175	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	180	500:$2.9720 250:$3.1610 100:$3.2759 10:$3.8120 1:$4.9719
NGTB25N120SWG DISTI # NGTB25N120SWGOS-ND	ON Semiconductor	IGBT 25A 1200V TO-247 RoHS: Compliant Container: Tube	Limited Supply - Call
NGTB25N120SWG DISTI # 28953275	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	180	3:$4.9719
NGTB25N120SWG DISTI # NGTB25N120SWG	ON Semiconductor	Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Rail - Bulk (Alt: NGTB25N120SWG) Min Qty: 131 Container: Bulk	Americas - 0	1310:$2.2900 131:$2.3900 262:$2.3900 393:$2.3900 655:$2.3900
NGTB25N120SWG DISTI # 58Y3609	ON Semiconductor	IGBT Single Transistor, 50 A, 2 V, 385 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	0
NGTB25N120SWG DISTI # 863-NGTB25N120SWG	ON Semiconductor	IGBT Transistors FSII 25A 1200V Welding RoHS: Compliant	19	1:$4.5500 10:$3.8700 100:$3.3500 250:$3.1800 500:$2.8500
NGTB25N120SWG	ON Semiconductor	Insulated Gate Bipolar Transistor RoHS: Compliant	60	1000:$2.5100 500:$2.6500 100:$2.7500 25:$2.8700 1:$3.0900
NGTB25N120SWG DISTI # 2492858	ON Semiconductor	IGBT, SINGLE, 1.2KV, 50A, TO-247-3 RoHS: Compliant	152	500:£2.1800 250:£2.4300 100:£2.5600 10:£2.9500 1:£3.8700

Image	Part #	Description
	Mfr.#: NGTB25N120FL2WG OMO.#: OMO-NGTB25N120FL2WG	IGBT Transistors 1200V/25 FAST IGBT FSII T
	Mfr.#: NGTB25N120FLWG OMO.#: OMO-NGTB25N120FLWG	IGBT Transistors 1200V/25A IGBT SOLAR/UPS
	Mfr.#: NGTB25N120FL2WG OMO.#: OMO-NGTB25N120FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/25 FAST IGBT FSII T
	Mfr.#: NGTB25N120FLWG OMO.#: OMO-NGTB25N120FLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/25A IGBT SOLAR/UPS
	Mfr.#: NGTB25N120LWG OMO.#: OMO-NGTB25N120LWG-ON-SEMICONDUCTOR	IGBT Transistors 1200/25A IGBT LPT TO-247
	Mfr.#: NGTB25N120FL2WAG OMO.#: OMO-NGTB25N120FL2WAG-ON-SEMICONDUCTOR	Trans IGBT Chip N-CH 1.2KV 100A
	Mfr.#: NGTB25N120 OMO.#: OMO-NGTB25N120-1190	New and Original
	Mfr.#: NGTB25N120FL OMO.#: OMO-NGTB25N120FL-1190	New and Original
	Mfr.#: NGTB25N120FLWG/SL25T120F OMO.#: OMO-NGTB25N120FLWG-SL25T120F-1190	New and Original
	Mfr.#: NGTB25N120IHLWG,25N120IH OMO.#: OMO-NGTB25N120IHLWG-25N120IH-1190	New and Original

NGTB25N120SWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes