BSZ0506NSATMA1

Mfr. #:: BSZ0506NSATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET LV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ0506NSATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: BSZ0506NSATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TSDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 40 A

Rds On - Drain-Source Resistance:: 4.4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 11 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 27 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 3.3 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 49 S

Fall Time:: 2 ns

Product Type:: MOSFET

Rise Time:: 2.4 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 13 ns

Typical Turn-On Delay Time:: 2.3 ns

Part # Aliases:: BSZ0506NS SP001281636

Unit Weight:: 0.001212 oz

Tags: BSZ0506, BSZ050, BSZ05, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSZ0506NSATMA1 Description

***ure Electronics: BSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS5 Power-MOSFET - TSDSON-8 FL

***el Electronic: In a Pack of 10, N-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ0506NSATMA1

***nell: MOSFET, N-CH, 30V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 27W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

***ure Electronics: FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56

*** Stop Electro: Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

***emi: N-Channel PowerTrench® SyncFET™ 30V, 42A, 4mΩ

*** Stop Electro: Power Field-Effect Transistor, 19A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS0310S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***emi: N-Channel PowerTrench® SyncFET™ MOSFET 30V, 42A, 3.5mΩ

***ure Electronics: N-Channel 30 V 3.5 mOhm Surface Mount PowerTrench Mosfet - Power 56

***rchild Semiconductor: The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***nell: MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:20A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.5V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:200A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8670S; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V

***ure Electronics: Single N-Channel 30 V 0.0031 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

*** Source Electronics: MOSFET N-CH 30V 50A PPAK SO-8 / Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO EP T/R

***ment14 APAC: MOSFET, N-CH, 30V, 50A, POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V

***(Formerly Allied Electronics): SISS27DN-T1-GE3 P-channel MOSFET Transistor; 23 A; 30 V; 8-Pin PowerPAK 1212

***ical: Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212-S T/R

***ure Electronics: SiSS27DN Series 30 V 50 A 57 W P-Channel Mosfet - PowerPAK® 1212-8S

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ark: P-Chan PowerPAK1212 BWL 30V 9mohm@4.5V

***ure Electronics: Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***et: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

BSZ0506NSATMA1 More Information

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Market price

Part #	Mfg.	Description	Stock	Price
BSZ0506NSATMA1 DISTI # V72:2272_06384846	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 8-Pin TSDSON EP T/R	0
BSZ0506NSATMA1 DISTI # V36:1790_06384846	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 8-Pin TSDSON EP T/R	0	5000000:$0.2842 2500000:$0.2845 500000:$0.3049 50000:$0.3400 5000:$0.3459
BSZ0506NSATMA1 DISTI # BSZ0506NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 15A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4922In Stock	1000:$0.3958 500:$0.5014 100:$0.6069 10:$0.7780 1:$0.8700
BSZ0506NSATMA1 DISTI # BSZ0506NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 15A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4922In Stock	1000:$0.3958 500:$0.5014 100:$0.6069 10:$0.7780 1:$0.8700
BSZ0506NSATMA1 DISTI # BSZ0506NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 15A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	25000:$0.3245 10000:$0.3331 5000:$0.3459
BSZ0506NSATMA1 DISTI # SP001281636	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 8-Pin TSDSON T/R (Alt: SP001281636) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 5000	50000:€0.2769 30000:€0.2989 20000:€0.3239 10000:€0.3529 5000:€0.4319
BSZ0506NSATMA1 DISTI # BSZ0506NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ0506NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3099 30000:$0.3149 20000:$0.3259 10000:$0.3379 5000:$0.3509
BSZ0506NSATMA1 DISTI # 13AC8351	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	4500	1000:$0.3950 500:$0.4280 250:$0.4600 100:$0.4930 50:$0.5830 25:$0.6740 10:$0.7650 1:$0.9190
BSZ0506NSATMA1	Infineon Technologies AG	BSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS5 Power-MOSFET - TSDSON-8 FL RoHS: Compliant	140Cut Tape/Mini-Reel	1:$0.4300 100:$0.3800 250:$0.3700 500:$0.3600 1500:$0.3500
BSZ0506NSATMA1 DISTI # 726-BSZ0506NSATMA1	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	4412	1:$0.9100 10:$0.7570 100:$0.4880 1000:$0.3910 5000:$0.3300 10000:$0.3180 25000:$0.3050
BSZ0506NSATMA1 DISTI # 1336708	Infineon Technologies AG	MOSFET OPTIMOS5 30V 40A 4.4MOHM TSDSON8, RL	4960	10000:£0.2090 5000:£0.2140
BSZ0506NSATMA1 DISTI # 2725823	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON RoHS: Compliant	4500	1000:$0.6340 500:$0.8020 100:$1.0500 10:$1.3200 1:$1.4800
BSZ0506NSATMA1 DISTI # 2725823	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TSDSON	4547	500:£0.3260 250:£0.3510 100:£0.3760 10:£0.6370 1:£0.8020

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BSZ0506NSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes