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BSZ099N06LS5ATMA1

BSZ099N06LS5ATMA1
Mfr. #:
BSZ099N06LS5ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ099N06LS5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
9.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
6.9 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
36 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
20 S
Fall Time:
2.7 ns
Product Type:
MOSFET
Rise Time:
2.7 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
13.8 ns
Typical Turn-On Delay Time:
4.3 ns
Part # Aliases:
BSZ099N06LS5 SP001352990
Unit Weight:
0.001249 oz
Tags
BSZ099, BSZ09, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 9.9 mOhm 6.9 nC OptiMOS™ Power Mosfet - TSDSON-8 FL
***ark
MOSFET, N-CH, 60V, 40A, 150DEG C, 36W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0083ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Part # Mfg. Description Stock Price
BSZ099N06LS5ATMA1
DISTI # V72:2272_14663612		Infineon Technologies AG60V N-Channel MOSFET9
  • 1:$0.9673
BSZ099N06LS5ATMA1
DISTI # V36:1790_14663612		Infineon Technologies AG60V N-Channel MOSFET0
  • 5000000:$0.2887
  • 2500000:$0.2889
  • 500000:$0.3061
  • 50000:$0.3349
  • 5000:$0.3396
BSZ099N06LS5ATMA1
DISTI # BSZ099N06LS5ATMA1-ND		Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.3396
BSZ099N06LS5ATMA1
DISTI # 31699912		Infineon Technologies AG60V N-Channel MOSFET5000
  • 5000:$0.3195
BSZ099N06LS5ATMA1
DISTI # 32437088		Infineon Technologies AG60V N-Channel MOSFET5000
  • 5000:$0.4922
BSZ099N06LS5ATMA1
DISTI # SP001352990		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001352990)
RoHS: Compliant
Min Qty: 5000		Europe - 5000
  • 50000:€0.3029
  • 30000:€0.3259
  • 20000:€0.3539
  • 10000:€0.3859
  • 5000:€0.4719
BSZ099N06LS5ATMA1
DISTI # BSZ099N06LS5ATMA1		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ099N06LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3039
  • 30000:$0.3089
  • 20000:$0.3199
  • 10000:$0.3319
  • 5000:$0.3449
BSZ099N06LS5ATMA1
DISTI # BSZ099N06LS5		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: BSZ099N06LS5)
RoHS: Compliant
Min Qty: 5000		Asia - 0
  • 250000:$0.3033
  • 125000:$0.3072
  • 50000:$0.3112
  • 25000:$0.3153
  • 15000:$0.3238
  • 10000:$0.3328
  • 5000:$0.3423
BSZ099N06LS5ATMA1Infineon Technologies AGSingle N-Channel 60 V 9.9 mOhm 6.9 nC OptiMOS Power Mosfet - TSDSON-8 FL
RoHS: Compliant		5000Reel
  • 5000:$0.3000
BSZ099N06LS5ATMA1
DISTI # 726-BSZ099N06LS5ATMA		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		18100
  • 1:$0.8900
  • 10:$0.7430
  • 100:$0.4800
  • 1000:$0.3840
  • 5000:$0.3240
  • 10000:$0.3120
  • 25000:$0.3000
BSZ099N06LS5ATMA1
DISTI # XSFP00000040984		Infineon Technologies AG 
RoHS: Compliant		10000 in Stock0 on Order
  • 10000:$0.4000
  • 5000:$0.4286
BSZ099N06LS5ATMA1
DISTI # XSKDRABV0046953		Infineon Technologies AG1608 (0603)
RoHS: Compliant		15000 in Stock0 on Order
  • 15000:$0.4480
  • 5000:$0.4800
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Mfr.#: 04026C103JAT2A

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Availability
Stock:
17
On Order:
2000
Enter Quantity:
Current price of BSZ099N06LS5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.89
$0.89
10
$0.74
$7.43
100
$0.48
$48.00
1000
$0.38
$384.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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