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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IPD096N08N3GATMA1 DISTI # IPD096N08N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 73A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 10587In Stock |
|
| IPD096N08N3GATMA1 DISTI # IPD096N08N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 73A RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 10587In Stock |
|
| IPD096N08N3GATMA1 DISTI # IPD096N08N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 73A RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 7500In Stock |
|
| IPD096N08N3GBTMA1 DISTI # IPD096N08N3GBTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 73A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD096N08N3G DISTI # IPD096N08N3G | Infineon Technologies AG | Trans MOSFET N-CH 80V 73A 3-Pin TO-252 T/R - Bulk (Alt: IPD096N08N3G) RoHS: Not Compliant Min Qty: 758 Container: Bulk | Americas - 0 |
|
| IPD096N08N3GATMA1 DISTI # IPD096N08N3GATMA1 | Infineon Technologies AG | Trans MOSFET N 80V 73A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD096N08N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD096N08N3GBTMA1 DISTI # IPD096N08N3GBTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 73A 3-Pin TO-252 T/R - Bulk (Alt: IPD096N08N3GBTMA1) RoHS: Compliant Min Qty: 758 Container: Bulk | Americas - 0 |
|
| IPD096N08N3GATMA1 DISTI # SP001127826 | Infineon Technologies AG | Trans MOSFET N 80V 73A 3-Pin TO-252 T/R (Alt: SP001127826) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD096N08N3GATMA1 DISTI # 34AC1666 | Infineon Technologies AG | MOSFET, N-CH, 80V, 73A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:73A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0079ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes | 2185 |
|
| IPD096N08N3GATMA1 DISTI # 726-IPD096N08N3GATMA | Infineon Technologies AG | MOSFET RoHS: Compliant | 4536 |
|
| IPD096N08N3 G DISTI # 726-IPD096N08N3G | Infineon Technologies AG | MOSFET N-Ch 80V 73A DPAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPD096N08N3GBTMA1 DISTI # N/A | Infineon Technologies AG | MOSFET MV POWER MOS | 0 | |
| IPD096N08N3G | Infineon Technologies AG | Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 51979 |
|
| IPD096N08N3GBTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 1623 |
|
| IPD096N08N3 G | Infineon Technologies AG | 2589 | ||
| IPD096N08N3GATMA1 DISTI # 2781078 | Infineon Technologies AG | MOSFET, N-CH, 80V, 73A, TO-252 | 4391 |
|
| IPD096N08N3G | Infineon Technologies AG | 60V,9.6m,73A,N-Channel Power MOSFET | 1950 |
|
| IPD096N08N3 G DISTI # C1S322000188699 | Infineon Technologies AG | Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) TO-252 RoHS: Compliant | 2500 |
|
| IPD096N08N3GATMA1 DISTI # 2781078 | Infineon Technologies AG | MOSFET, N-CH, 80V, 73A, TO-252 RoHS: Compliant | 2185 |
|
| Image | Part # | Description |
|---|---|---|
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