IRFS23N15DPBF

Mfr. #:: IRFS23N15DPBF
Manufacturer:: Infineon Technologies AG
Description:: MOSFET, Power, N-Ch, VDSS 150V, RDS(ON) 0.09Ohm, ID 23A, D2Pak, PD 136W, VGS +/-30V, -55
Lifecycle:: New from this manufacturer.
Datasheet:: IRFS23N15DPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: IRFS23N1, IRFS23, IRFS2, IRFS, IRF

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IRFS23N15DPBF Description

***ernational Rectifier: 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 0.09Ohm,ID 23A,D2Pak,PD 136W,VGS+/-30V,-55C

***ical: Trans MOSFET N-CH 150V 23A 3-Pin (2+Tab) D2PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRFS23N20DPBF N-channel MOSFET Transistor; 24 A; 200 V; 3-Pin D2PAK

***ure Electronics: Single N-Channel 200 V 3.8 W 57 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, N, 200V, 24A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power D

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***emi: N-Channel Power MOSFET, UniFETTM, 300V, 28A, 129mΩ, D2PAK

***ure Electronics: N-Channel 300 V 0.129 Ohm Surface Mount UniFET Mosfet - D2PAK-3

*** Source Electronics: Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 300V 28A D2PAK

***ment14 APAC: N CHANNEL MOSFET, 300V, 28A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:300V; On Resistance Rds(on):108mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V

***nell: MOSFET, N-CH, 300V, 28A, TO-263AB-2; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.108ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263AB; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

*** Source Electronics: Trans MOSFET P-CH 100V 22A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 22A D2PAK

***emi: P-Channel MOSFET, QFET® -100V, -22A, 125mΩ

***ure Electronics: P-Channel 100 V 22 A 125 mOhm Surface Mount Q-FET Mosfet - D2PAK

***Yang: Trans MOSFET P-CH 100V 22A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (A

***roFlash: Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***nell: MOSFET, P CH, -100V, -22A, TO-263AB-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -22A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.096ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.75W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Current Id Max: 15.6mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 88A; Rate of Voltage Change dv / dt: 6V/ns; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

***emi: N-Channel Power MOSFET, QFET®, 200 V, 19 A, 170 mΩ, D2PAK

***ure Electronics: N-Channel 200 V 0.17 Ohm Surface Mount Mosfet - D2PAK-3

***et Europe: Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) D2PAK T/R

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N-CH, 600V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
IRFS23N15DPBF DISTI # 70017264	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 150V,RDS(ON) 0.09Ohm,ID 23A,D2Pak,PD 136W,VGS +/-30V,-55 RoHS: Compliant	0	450:$1.2000

Image	Part #	Description
	Mfr.#: IRFS23N15DTRLP OMO.#: OMO-IRFS23N15DTRLP	MOSFET MOSFT 150V 23A 90mOhm 37nC
	Mfr.#: IRFS23N20DTRLP OMO.#: OMO-IRFS23N20DTRLP	MOSFET MOSFT 200V 24A 100mOhm 57nC
	Mfr.#: IRFS23N20DTRRP OMO.#: OMO-IRFS23N20DTRRP	MOSFET 200V Single NChannel HEXFET Power MOSFET
	Mfr.#: IRFS23N20DPBF OMO.#: OMO-IRFS23N20DPBF	MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC
	Mfr.#: IRFS23N20DPBF OMO.#: OMO-IRFS23N20DPBF-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC
	Mfr.#: IRFS23N15DTRLP OMO.#: OMO-IRFS23N15DTRLP-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET MOSFT 150V 23A 90mOhm 37nC
	Mfr.#: IRFS23N15D OMO.#: OMO-IRFS23N15D-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 23A D2PAK
	Mfr.#: IRFS23N20DTRLP OMO.#: OMO-IRFS23N20DTRLP-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 24A D2PAK
	Mfr.#: IRFS23N20DTRRPBF OMO.#: OMO-IRFS23N20DTRRPBF-1190	New and Original
	Mfr.#: IRFS23N20DTRRP OMO.#: OMO-IRFS23N20DTRRP-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 200V Single NChannel HEXFET Power MOSFET

IRFS23N15DPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes