TK31V60W5,LVQ

TK31V60W5,LVQ
Mfr. #:
TK31V60W5,LVQ
Manufacturer:
Toshiba
Description:
MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A
Lifecycle:
New from this manufacturer.
Datasheet:
TK31V60W5,LVQ Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31V60W5,LVQ DatasheetTK31V60W5,LVQ Datasheet (P4-P6)TK31V60W5,LVQ Datasheet (P7-P9)TK31V60W5,LVQ Datasheet (P10)
ECAD Model:
More Information:
TK31V60W5,LVQ more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DFN8x8-5
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
30.8 A
Rds On - Drain-Source Resistance:
87 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
105 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
240 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DTMOSIV
Packaging:
Reel
Height:
0.85 mm
Length:
8 mm
Series:
TK31
Transistor Type:
1 N-Channel
Width:
8 mm
Brand:
Toshiba
Fall Time:
8.5 ns
Product Type:
MOSFET
Rise Time:
80 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
165 ns
Typical Turn-On Delay Time:
120 ns
Tags
TK31V60W5, TK31V60W, TK31V, TK31, TK3
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 600V 30.8A 5-Pin DFN EP T/R
***
POWER MOSFET TRANSISTOR DTMOS
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of TK31V60W5,LVQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.94
$3.94
10
$3.17
$31.70
100
$2.89
$289.00
250
$2.60
$650.00
500
$2.34
$1 170.00
1000
$1.97
$1 970.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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