SSM6N357R,LF

SSM6N357R,LF
Mfr. #:
SSM6N357R,LF
Manufacturer:
Toshiba
Description:
MOSFET LowON Res MOSFET ID=.65A VDSS=60V
Lifecycle:
New from this manufacturer.
Datasheet:
SSM6N357R,LF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM6N357R,LF DatasheetSSM6N357R,LF Datasheet (P4-P6)SSM6N357R,LF Datasheet (P7-P9)
ECAD Model:
More Information:
SSM6N357R,LF more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSOP-6F
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
650 mA
Rds On - Drain-Source Resistance:
1.8 Ohms
Vgs th - Gate-Source Threshold Voltage:
1.3 V
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
1.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1 W
Configuration:
Dual
Channel Mode:
Enhancement
Packaging:
Reel
Series:
SSM6N357R
Brand:
Toshiba
Forward Transconductance - Min:
500 mS
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
3000 ns
Typical Turn-On Delay Time:
990 ns
Unit Weight:
0.000564 oz
Tags
SSM6N35, SSM6N3, SSM6N, SSM6, SSM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel MOSFETs designed for relay driver applications. The SSM6N357R,LF comes with 2 channels whereas the SSM3K357R,LF comes with a single channel. These MOSFETs feature 3V gate drive voltage, built-in internal zener diodes, resistors, and 2kV class Human Body Model (HBM). The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, 150°C channel temperature, and 12.6mJ single-pulse avalanche energy. 
SSM6 Low On-resistance MOSFET
Toshiba SSM6 Low On-resistance MOSFETs with high-speed switching operate as both power management switches and analog switches. These MOSFETs provide very low on-resistance as low as 1.1mΩ to a 115Ω maximum for different sets of gate to source voltage range. The SSM6 MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance and operate as DC to DC converters. The SSM6 MOSFETs drive a 1.2V minimum to 4.5V maximum gate voltage. These MOSFETs deliver less drain power dissipation up to 150mW producing less heat. The SM66 MOSFETs operate at 12V to 100V input voltage range.   
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Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of SSM6N357R,LF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.44
$0.44
10
$0.32
$3.25
100
$0.20
$20.50
1000
$0.15
$154.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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