CGHV96100F2

Mfr. #:: CGHV96100F2
Manufacturer:: N/A
Description:: RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
Lifecycle:: New from this manufacturer.
Datasheet:: CGHV96100F2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: CGHV96100F2 more Information

Product Attribute
Attribute Value

Manufacturer:: Qorvo

Product Category:: RF JFET Transistors

RoHS:: Y

Transistor Type:: HEMT

Technology:: GaN SiC

Packaging:: Tray

Series:: T2G

Brand:: Qorvo

Moisture Sensitive:: Yes

Product Type:: RF JFET Transistors

Factory Pack Quantity:: 50

Subcategory:: Transistors

Part # Aliases:: 1100007

Tags: CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96100F2 Description

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96100F2 More Information

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
CGHV96100F2 DISTI # CGHV96100F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	210In Stock	1:$717.5400
CGHV96100F2-TB DISTI # CGHV96100F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96100F2 RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	1:$550.0000
CGHV96100F2 DISTI # 941-CGHV96100F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt RoHS: Compliant	98	1:$717.5400
CGHV96100F2-TB DISTI # 941-CGHV96100F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Compliant	0	1:$550.0000

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Availability

Stock:: 88
On Order:: 2071
Enter Quantity:

Current price of CGHV96100F2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$583.03~~; ~~$583.03~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

CGHV9 6
CGHV 89
CGH 418

CGHV96100F2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes