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CSD85312Q3E

CSD85312Q3E
Mfr. #:
CSD85312Q3E
Description:
MOSFET Dual 20V N-CH Pwr MOSFETs
Lifecycle:
New from this manufacturer.
Datasheet:
CSD85312Q3E Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CSD85312Q3E more Information CSD85312Q3E Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
14 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
11.7 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Dual
Tradename:
NexFET
Packaging:
Reel
Height:
1 mm
Length:
3.3 mm
Series:
CSD85312Q3E
Transistor Type:
2 N-Channel
Width:
3.3 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
99 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
11 ns
Unit Weight:
0.001129 oz
Tags
CSD85, CSD8, CSD
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
20V, N ch NexFET MOSFET™, dual common source SON3x3, 14mOhm 8-VSON -55 to 150
***ark
TRANSISTOR, MOSFET, N CHANNEL, 20V, 39A, SON8
***p One Stop Global
Trans MOSFET N-CH 20V 39A 8-Pin VSON EP T/R
***et Europe
Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R
***i-Key
MOSFET 2N-CH 20V 39A 8VSON
***AS INTRUMENTS
The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Part # Description Stock Price
CSD85312Q3E
DISTI # 296-37187-1-ND		MOSFET 2N-CH 20V 39A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7848In Stock
  • 1000:$0.4640
  • 500:$0.5877
  • 100:$0.7578
  • 10:$0.9590
  • 1:$1.0800
CSD85312Q3E
DISTI # 296-37187-6-ND		MOSFET 2N-CH 20V 39A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7848In Stock
  • 1000:$0.4640
  • 500:$0.5877
  • 100:$0.7578
  • 10:$0.9590
  • 1:$1.0800
CSD85312Q3E
DISTI # 296-37187-2-ND		MOSFET 2N-CH 20V 39A 8VSON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 12500:$0.3844
  • 5000:$0.3994
  • 2500:$0.4204
CSD85312Q3E
DISTI # CSD85312Q3E		Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R - Tape and Reel (Alt: CSD85312Q3E)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 2500
  • 2500:$0.3559
  • 5000:$0.3549
  • 10000:$0.3539
  • 15000:$0.3529
  • 25000:$0.3529
CSD85312Q3E
DISTI # CSD85312Q3E		Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    CSD85312Q3E
    DISTI # CSD85312Q3E    		Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1:€0.5489
    • 10:€0.4939
    • 25:€0.4489
    • 50:€0.4119
    • 100:€0.3799
    • 500:€0.3529
    • 1000:€0.3289
    CSD85312Q3EDual 20-V N-Channel NexFET&#153,Power MOSFETs, CSD85312Q3E4740
    • 1000:$0.3100
    • 750:$0.3500
    • 500:$0.4300
    • 250:$0.5300
    • 100:$0.5800
    • 25:$0.6700
    • 10:$0.7300
    • 1:$0.8200
    CSD85312Q3EPower Field-Effect Transistor, 12A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		83400
    • 1000:$0.3600
    • 500:$0.3700
    • 100:$0.3900
    • 25:$0.4100
    • 1:$0.4400
    CSD85312Q3E
    DISTI # 595-CSD85312Q3E    		MOSFET Dual 20V N-CH Pwr MOSFETs
    RoHS: Compliant    		3104
    • 1:$0.9000
    • 10:$0.7700
    • 100:$0.5870
    • 500:$0.5190
    • 1000:$0.4100
    • 2500:$0.3640
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of CSD85312Q3E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.90
    $0.90
    10
    $0.77
    $7.70
    100
    $0.59
    $58.70
    500
    $0.52
    $259.50
    1000
    $0.41
    $410.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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