BSC046N10NS3GATMA1

Mfr. #:: BSC046N10NS3GATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 100A TDSON-8
Lifecycle:: New from this manufacturer.
Datasheet:: BSC046N10NS3GATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 63 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 156 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 48 S

Fall Time:: 11 ns

Product Type:: MOSFET

Rise Time:: 14 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 41 ns

Typical Turn-On Delay Time:: 16 ns

Part # Aliases:: BSC046N10NS3 BSC46N1NS3GXT G SP000907922

Tags: BSC046N10NS3, BSC046N1, BSC046, BSC04, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC046N10NS3GATMA1 Description

***ure Electronics: N-Channel 100 V 4.6 mOhm OptiMOS3 Power-MOSFET - PG-TDSON-8

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 100V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V;

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ark: MOSFET Transistor, N Channel, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V

***ure Electronics: Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance

***nell: MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

***ure Electronics: Single N-Channel 75 V 3.6 mOhm 63.4 nC OptiMOS Power Mosfet - TDSON-8

***p One Stop: Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R

***ment14 APAC: MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance

***nell: MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***ineon: The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

***ure Electronics: Single P-Channel 100 V 0.2 Ohms Surface Mount Power Mosfet - D2PAK-3

***ical: Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK T/R

***ark: P CH MOSFET, -100V, 19A, SMD-220, FULL REEL

***roFlash: Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, P-CH, 100V, 19A, TO-263;

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 100V 19A 8-Pin PQFN EP T/R

***(Formerly Allied Electronics): MOSFET, 100V,100A, 5.2 mOhm, 34nC, PQFN5x6

***ineon: Benefits: Low RDSon (less than 5.2 mOhms); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg Tested; Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1; FastIRFET | Target Applications: HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***emi: N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ

***r Electronics: Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***emi: N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ

***ark: MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Market price

Part #	Mfg.	Description	Stock	Price
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.4162
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.5954 500:$1.8917 100:$2.3361 10:$2.8490 1:$3.1900
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.5954 500:$1.8917 100:$2.3361 10:$2.8490 1:$3.1900
BSC046N10NS3GATMA1 DISTI # BSC046N10NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.3900 5002:$1.2900 10002:$1.2900 25000:$1.2900 50000:$1.1900
BSC046N10NS3GATMA1 DISTI # 50Y1804	Infineon Technologies AG	MOSFET, N-CH, 100V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes	0	1:$2.6700 10:$2.2700 25:$2.1700 50:$2.0700 100:$1.9700 250:$1.8700 500:$1.6700 1000:$1.4100
BSC046N10NS3 G DISTI # 726-BSC046N10NS3G	Infineon Technologies AG	MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant	100	1:$2.6700 10:$2.2700 100:$1.9700 250:$1.8700 500:$1.6700 1000:$1.4100 2500:$1.3400 5000:$1.2900
BSC046N10NS3GATMA1 DISTI # 726-BSC046N10NS3GATM	Infineon Technologies AG	MOSFET N-Ch 100V 100A TDSON-8 RoHS: Compliant	0	1:$2.6700 10:$2.2700 100:$1.9700 250:$1.8700 500:$1.6700 1000:$1.4100 2500:$1.3400 5000:$1.2900
BSC046N10NS3GATMA1 DISTI # 2480739	Infineon Technologies AG	MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant	0	1:$4.2300 10:$3.6000 100:$3.1200 250:$2.9700 500:$2.6500 1000:$2.2300 2500:$2.1300 5000:$2.0400
BSC046N10NS3GATMA1 DISTI # 2480739RL	Infineon Technologies AG	MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant	0	1:$4.2300 10:$3.6000 100:$3.1200 250:$2.9700 500:$2.6500 1000:$2.2300 2500:$2.1300 5000:$2.0400
BSC046N10NS3GATMA1 DISTI # 2480739	Infineon Technologies AG	MOSFET, N-CH, 100V, 100A, TDSON-8 RoHS: Compliant	0	1:£2.3000 10:£1.7400 100:£1.5000 250:£1.4300 500:£1.2700

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BSC046N10NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes