BFP780H6327XTSA1

BFP780H6327XTSA1
Mfr. #:
BFP780H6327XTSA1
Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF BIP TRANSISTORS
Lifecycle:
New from this manufacturer.
Datasheet:
BFP780H6327XTSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BFP780H6327XTSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
RF Amplifier
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
SOT-343-4
Type:
High Gain Driver Amplifier
Technology:
SiGe
Operating Frequency:
900 MHz
P1dB - Compression Point:
23 dBm
Gain:
27 dB
Operating Supply Voltage:
5 V
NF - Noise Figure:
1.2 dB
Test Frequency:
900 MHz
OIP3 - Third Order Intercept:
34.5 dBm
Operating Supply Current:
90 mA
Maximum Operating Temperature:
+ 150 C
Packaging:
Reel
Brand:
Infineon Technologies
Number of Channels:
1 Channel
Product Type:
RF Amplifier
Factory Pack Quantity:
3000
Subcategory:
Wireless & RF Integrated Circuits
Part # Aliases:
780 BFP H6327 SP000924978
Unit Weight:
0.000245 oz
Tags
BFP7, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor GP BJT NPN 6.1V 120mA 4-Pin SOT-343 T/R
***ow.cn
Trans RF BJT NPN 6.1V 0.12A 600mW 4-Pin(3+Tab) SOT-343 T/R
***ark
Transistor, Rf, Aec-Q101, Npn, Sot-343; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:6.6V; Transition Frequency Ft:20Ghz; Power Dissipation Pd:600Mw; Dc Collector Current:120Ma; Dc Current Gain Hfe:85Hfe; Rf Transistorrohs Compliant: Yes
***ineon
The BFP780 is a single stage driver amplifier with high linearity and high power gain. Its output 1dB compression point is 23 dBm. The chip is housed in a halogen-free industry standard package SOT343. The proper die attach with good thermal contact is 100% tested and verified. Same as BFQ790, the device is based on Infineon's reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. | Summary of Features: High 3rd order intercept point OIP3 of 34 dBm @ 5 V, 90 mA; High compression point OP1dB of 23 dBm @ 5 V, 90 mA corresponding to 45 % collector efficiency; Low minimum noise figure of 1.2 dB @ 900 MHz, 5 V, 30 mA; Single stage, intended for external matching; High maximum RF input power PRFinmax of 20 dBm; Safe operation with single 5 V supply; 100% test of proper die attach for reproducible thermal contact; 100% DC and RF tested; Easy to use large signal compact (VBIC) model in development; Cost effective NPN SiGe technology running in very high volume; Easy to use Pb-free (RoHS compliant) and halogen-free industry standard package SOT343, low RTHJS of 95 K/W | Target Applications: High linearity driver or pre-driver in the transmit chain; 2nd or 3rd stage LNA in the receive chain; IF or LO buffer amplifier; Commercial / industrial wireless infrastructure / basestations; Repeaters; Automated test equipment; Cellular, PCS, DCS, UMTS, LTE, CDMA, WCDMA, GSM, GPRS; WLAN, WiMAX, WLL and MMDS; ISM, AMR; UHF television, CATV, DBS
BFP780 200mW High Gain Driver Amplifier
Infineon BFP780 is designed a single-stage 200mW high-power gain driver amplifier. Because the device is intended for external matching, BFP780 can be used in any application where high linearity is essential. Operating from a single 5V supply, the BFP780 provides a high compression OP1dB of 23dBm output point and OIP3 of 34dBM 3rd order intercept point at 90mA. The amplifier delivers a low 1.2dB @ 900MHz minimum noise figure. The BFP780 proper die attach with thermal contact is 100% tested and verified to ensure a minimum variation in thermal properties. Housed in an industry-standard SOT343 package, BFP780 is 100% DC and RF tested.Learn More
Part # Mfg. Description Stock Price
BFP780H6327XTSA1
DISTI # V72:2272_13988657
Infineon Technologies AGHigh Gain RF Driver Amplifier2661
  • 1000:$0.8342
  • 500:$0.9979
  • 250:$1.0919
  • 100:$1.1848
  • 25:$1.4357
  • 10:$1.4390
  • 1:$1.5747
BFP780H6327XTSA1
DISTI # BFP780H6327XTSA1CT-ND
Infineon Technologies AGRF TRANS NPN 6.1V 900MHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1571In Stock
  • 1000:$0.9701
  • 500:$1.1486
  • 100:$1.3746
  • 10:$1.6840
  • 1:$1.8600
BFP780H6327XTSA1
DISTI # BFP780H6327XTSA1DKR-ND
Infineon Technologies AGRF TRANS NPN 6.1V 900MHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1571In Stock
  • 1000:$0.9701
  • 500:$1.1486
  • 100:$1.3746
  • 10:$1.6840
  • 1:$1.8600
BFP780H6327XTSA1
DISTI # BFP780H6327XTSA1TR-ND
Infineon Technologies AGRF TRANS NPN 6.1V 900MHZ SOT343
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 6000:$0.8745
  • 3000:$0.8841
BFP780H6327XTSA1
DISTI # 26196596
Infineon Technologies AGHigh Gain RF Driver Amplifier2661
  • 1000:$0.8342
  • 500:$0.9979
  • 250:$1.0919
  • 100:$1.1848
  • 25:$1.4357
  • 10:$1.4390
BFP780H6327XTSA1
DISTI # SP000924978
Infineon Technologies AGRF BIP TRANSISTORS (Alt: SP000924978)
RoHS: Compliant
Min Qty: 3000
Europe - 3000
  • 3000:€0.7459
  • 6000:€0.7439
  • 12000:€0.7419
  • 18000:€0.7399
  • 30000:€0.7379
BFP780H6327XTSA1
DISTI # BFP780H6327XTSA1
Infineon Technologies AGRF BIP TRANSISTORS - Tape and Reel (Alt: BFP780H6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.7919
  • 6000:$0.7629
  • 12000:$0.7359
  • 18000:$0.7109
  • 30000:$0.6979
BFP780H6327XTSA1
DISTI # 34AC1358
Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-343,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:6.6V,Transition Frequency ft:20GHz,Power Dissipation Pd:600mW,DC Collector Current:120mA,DC Current Gain hFE:85hFE,RF TransistorRoHS Compliant: Yes1134
  • 1:$1.7500
  • 10:$1.5800
  • 25:$1.4800
  • 50:$1.3700
  • 100:$1.2700
  • 250:$1.1600
  • 500:$1.0500
  • 1000:$0.8630
BFP780H6327XTSA1
DISTI # 726-BFP780H6327XTSA1
Infineon Technologies AGRF Amplifier RF BIP TRANSISTORS
RoHS: Compliant
2881
  • 1:$1.7500
  • 10:$1.5800
  • 100:$1.2700
  • 250:$1.1600
  • 500:$1.0500
  • 1000:$0.8630
BFP780H6327XTSA1Infineon Technologies AG 
RoHS: Not Compliant
32000
  • 1000:$0.7200
  • 500:$0.7600
  • 100:$0.7900
  • 25:$0.8300
  • 1:$0.8900
BFP780H6327XTSA1
DISTI # 2781217
Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-343
RoHS: Compliant
949
  • 5:£1.3500
  • 25:£1.2400
  • 100:£1.0000
  • 250:£0.9150
  • 500:£0.8220
BFP780H6327XTSA1
DISTI # 2781217
Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, SOT-343
RoHS: Compliant
834
  • 5:$2.9500
  • 25:$2.5700
  • 100:$2.1000
  • 250:$1.7700
  • 500:$1.5300
  • 1000:$1.4500
  • 5000:$1.3700
BFP780H6327XTSA1
DISTI # C1S322000560820
Infineon Technologies AGHigh Gain RF Driver Amplifier
RoHS: Compliant
2661
  • 250:$1.0314
  • 100:$1.1103
  • 25:$1.3155
  • 10:$1.3210
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Mfr.#: TLV76033DBZT

OMO.#: OMO-TLV76033DBZT-TEXAS-INSTRUMENTS

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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of BFP780H6327XTSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.75
$1.75
10
$1.58
$15.80
100
$1.27
$127.00
250
$1.16
$290.00
500
$1.05
$525.00
1000
$0.86
$863.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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