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GS8160Z18DGT-250I

GS8160Z18DGT-250I
Mfr. #:
GS8160Z18DGT-250I
Manufacturer:
GSI Technology
Description:
SRAM 2.5 or 3.3V 1M x 18 18M
Lifecycle:
New from this manufacturer.
Datasheet:
GS8160Z18DGT-250I Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
GS8160Z18DGT-250I more Information
Product Attribute
Attribute Value
Manufacturer:
GSI Technology
Product Category:
SRAM
RoHS:
Y
Memory Size:
18 Mbit
Organization:
1 M x 18
Access Time:
5.5 ns
Maximum Clock Frequency:
250 MHz
Interface Type:
Parallel
Supply Voltage - Max:
3.6 V
Supply Voltage - Min:
2.3 V
Supply Current - Max:
230 mA, 250 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Mounting Style:
SMD/SMT
Package / Case:
TQFP-100
Packaging:
Tray
Memory Type:
SDR
Series:
GS8160Z18DGT
Type:
NBT Pipeline/Flow Through
Brand:
GSI Technology
Moisture Sensitive:
Yes
Product Type:
SRAM
Factory Pack Quantity:
36
Subcategory:
Memory & Data Storage
Tradename:
NBT SRAM
Tags
GS8160Z18DGT-25, GS8160Z18DGT-2, GS8160Z18D, GS8160Z1, GS8160Z, GS8160, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 5.5ns/2.5ns
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Image Part # Description
MBB02070C1204FCT00

Mfr.#: MBB02070C1204FCT00

OMO.#: OMO-MBB02070C1204FCT00

 Thin Film Resistors - Through Hole .6w 1.2Mohms 1%
MBB02070C1204FCT00

Mfr.#: MBB02070C1204FCT00

OMO.#: OMO-MBB02070C1204FCT00-VISHAY

 Thin Film Resistors - Through Hole .6w 1.2Mohms 1%
Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of GS8160Z18DGT-250I is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$15.46
$15.46
25
$14.36
$359.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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