IRLU3103PBF

Mfr. #:: IRLU3103PBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl
Lifecycle:: New from this manufacturer.
Datasheet:: IRLU3103PBF Datasheet
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HTML Datasheet:: IRLU3103PBF Datasheet IRLU3103PBF Datasheet (P4-P6)IRLU3103PBF Datasheet (P7-P9)IRLU3103PBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 46 A

Rds On - Drain-Source Resistance:: 24 mOhms

Vgs - Gate-Source Voltage:: 16 V

Qg - Gate Charge:: 33.3 nC

Pd - Power Dissipation:: 69 W

Configuration:: Single

Packaging:: Tube

Height:: 6.22 mm

Length:: 6.73 mm

Transistor Type:: 1 N-Channel

Width:: 2.38 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 75

Subcategory:: MOSFETs

Part # Aliases:: SP001578972

Unit Weight:: 0.139332 oz

Tags: IRLU3103, IRLU310, IRLU31, IRLU3, IRLU, IRL

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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IRLU3103PBF Description

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 30V, 46A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:107W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:55A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.8°C/W; On State resistance @ Vgs = 10V:19mohm; Package / Case:IPAK; Power Dissipation Pd:107W; Power Dissipation Pd:107W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5Milliohms;ID 56A;I-Pak (TO-251AA);PD 50W

***ure Electronics: Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - TO-251

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ment14 APAC: MOSFET, N, LOGIC, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:50W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:56A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V

***ser: MOSFETs 30V,58A,10 OHM, NCH PWR TRENCH MOSFET

***Yang: MOSFET N-CH 30V 58A I-PAK - Bulk

***i-Key Marketplace: MOSFET N-CH 30V 13A/58A IPAK

***S: new, original packaged

***el Nordic: Contact for details

***ser: MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes

***nell: MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:63A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:54.6W; Voltage, Vds Max:30V

***ical: Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***icroelectronics: N-channel 30 V, 0.0061 Ohm, 65 A, IPAK STripFET(TM) V Power MOSFET

*** Electronic Components: IGBT Transistors MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V

***r Electronics: Power Field-Effect Transistor, 65A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***emi: Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK

***ser: MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
IRLU3103PBF DISTI # IRLU3103PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 55A I-PAK RoHS: Compliant Min Qty: 900 Container: Tube	Limited Supply - Call
IRLU3103PBF DISTI # 70018570	Infineon Technologies AG	IRLU3103PBF N-channel MOSFET Transistor,55 A,30 V,3-Pin IPAK RoHS: Compliant	0	900:$1.6100 1800:$1.5780 4500:$1.5300 9000:$1.4650 22500:$1.3690
IRLU3103PBF	International Rectifier	RoHS: Not Compliant	343	1000:$0.5900 500:$0.6200 100:$0.6500 25:$0.6700 1:$0.7200
IRLU3103PBF DISTI # 942-IRLU3103PBF	Infineon Technologies AG	MOSFET MOSFT 30V 46A 19mOhm 33.3nC LogLvl RoHS: Compliant	0
IRLU3103PBF DISTI # 8651361	Infineon Technologies AG	MOSFET, N, 30V, 46A, I-PAK RoHS: Compliant	0	1:$1.9800 10:$1.6300 100:$1.3200 500:$1.1800 1000:$1.0500 2500:$0.9730 5000:$0.9400

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Availability

Stock:: Available
On Order:: 5500
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IRLU3103PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes