CY14B104LA-ZS25XI

CY14B104LA-ZS25XI
Mfr. #:
CY14B104LA-ZS25XI
Manufacturer:
Cypress Semiconductor
Description:
Lifecycle:
New from this manufacturer.
Datasheet:
CY14B104LA-ZS25XI Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CY14B104LA-ZS25XI more Information CY14B104LA-ZS25XI Product Details
Product Attribute
Attribute Value
Tags
CY14B104LA-ZS2, CY14B104LA-Z, CY14B104LA, CY14B104L, CY14B104, CY14B10, CY14B1, CY14B, CY14, CY1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
CY14B104 Series 4 Mb (512 K x 8) 3.3 V 25 ns NVSRAM - TSOP-44
***et
NVRAM NVSRAM Parallel 4M-Bit 3V 44-Pin TSOP-II Tray
***ment14 APAC
NV SRAM, 512K X 8BIT, 25NS, TSOP-II-44
***ress Semiconductor SCT
Nonvolatile SRAM, 4096 Kb Density, SOP-44, RoHS
***ark
Nv Sram, 512K X 8Bit, 25Ns, Tsop-Ii-44; Memory Size:4Mbit; Memory Organisation:512K X 8Bit; Read Access Time:25Ns; Write Access Time:25Ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:tsop-Ii; No. Of Rohs Compliant: Yes
Image Part # Description
CY14B104NA-ZS45XE

Mfr.#: CY14B104NA-ZS45XE

OMO.#: OMO-CY14B104NA-ZS45XE

NVRAM Non Volatile SRAMs
CY14B104K-ZS45XIT

Mfr.#: CY14B104K-ZS45XIT

OMO.#: OMO-CY14B104K-ZS45XIT

NVRAM 4Mb 3V 45ns 512K x 8 nvSRAM
CY14B104NA-ZS25XIT

Mfr.#: CY14B104NA-ZS25XIT

OMO.#: OMO-CY14B104NA-ZS25XIT

NVRAM 4Mb 3V 25ns 256K x 16 nvSRAM
CY14B104K-ZS25XIT

Mfr.#: CY14B104K-ZS25XIT

OMO.#: OMO-CY14B104K-ZS25XIT

NVRAM 4Mb 3V 25ns 512K x 8 nvSRAM
CY14B104L-BA20XC

Mfr.#: CY14B104L-BA20XC

OMO.#: OMO-CY14B104L-BA20XC

NVRAM 4 Mbit (512K x 8) 20ns nvSRAM
CY14B104L-BA20XIT

Mfr.#: CY14B104L-BA20XIT

OMO.#: OMO-CY14B104L-BA20XIT

NVRAM 4 Mbit (512K x 8) 20ns nvSRAM
CY14B104L-ZS45XI

Mfr.#: CY14B104L-ZS45XI

OMO.#: OMO-CY14B104L-ZS45XI

NVRAM 4 Mbit (512K x 8) 45ns nvSRAM
CY14B104N-BA20XC

Mfr.#: CY14B104N-BA20XC

OMO.#: OMO-CY14B104N-BA20XC-CYPRESS-SEMICONDUCTOR

IC NVSRAM 4M PARALLEL 48FBGA
CY14B104NA-BA45XIT

Mfr.#: CY14B104NA-BA45XIT

OMO.#: OMO-CY14B104NA-BA45XIT-CYPRESS-SEMICONDUCTOR

New and Original
CY14B104LA-ZS25XIT

Mfr.#: CY14B104LA-ZS25XIT

OMO.#: OMO-CY14B104LA-ZS25XIT-CYPRESS-SEMICONDUCTOR

New and Original
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of CY14B104LA-ZS25XI is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Start with
Newest Products
  • LB Series Inductors
    TAIYO YUDEN's LB series inductors have expanded to include price competitive, AEC-Q200 qualified high-reliability version inductors.
  • BRL3225 Series
    TAIYO YUDEN's wire wound chip inductors are designed to save space and provide optimal inductance and DC resistance values.
  • VF3 Hall Effect Sensor ICs
    Honeywell is pleased to announce its high sensitivity latching sensor ICs, VF360NT, VF360ST, that are AEC-Q100 qualified for use in the transportation industry. AEC-Q100 qualification provides enh
  • PLT Series Pulse Transformers
    KEMET's PLT pulse transformers are designed with a proprietary ferrite core and show excellent insertion loss characteristics.
  • MICRO SWITCH™ V7 Series
    Honeywell's V7 switch is available as a pin plunger style or with optional integral or auxiliary levers to actuate the switch and offer versatility in the application.
Top