BSC900N20NS3 G

BSC900N20NS3 G
Mfr. #:
BSC900N20NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC900N20NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
15.2 A
Rds On - Drain-Source Resistance:
90 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
9 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
62.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
8 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
10 ns
Typical Turn-On Delay Time:
5 ns
Part # Aliases:
BSC900N20NS3GATMA1 BSC9N2NS3GXT SP000781780
Unit Weight:
0.003527 oz
Tags
BSC90, BSC9, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.7505
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.8622
  • 500:$1.0405
  • 100:$1.3378
  • 10:$1.6650
  • 1:$1.8400
BSC900N20NS3GATMA1
DISTI # BSC900N20NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.8622
  • 500:$1.0405
  • 100:$1.3378
  • 10:$1.6650
  • 1:$1.8400
BSC900N20NS3 G
DISTI # BSC900N20NS3 G
Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TDSON EP (Alt: BSC900N20NS3 G)
RoHS: Compliant
Min Qty: 5000
Asia - 0
    BSC900N20NS3GATMA1
    DISTI # BSC900N20NS3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC900N20NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.7559
    • 10000:$0.7279
    • 20000:$0.7019
    • 30000:$0.6779
    • 50000:$0.6659
    BSC900N20NS3GATMA1
    DISTI # 85X4155
    Infineon Technologies AGMOSFET, N-CH, 200V, 15.2A, 62.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.5500
    • 10:$1.3200
    • 25:$1.2300
    • 50:$1.1400
    • 100:$1.0500
    • 250:$0.9850
    • 500:$0.9190
    • 1000:$0.7610
    BSC900N20NS3 G
    DISTI # 726-BSC900N20NS3G
    Infineon Technologies AGMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    RoHS: Compliant
    2956
    • 1:$1.5500
    • 10:$1.3200
    • 100:$1.0500
    • 500:$0.9190
    • 1000:$0.7610
    • 2500:$0.7090
    • 5000:$0.6830
    BSC900N20NS3GATMA1
    DISTI # 9064400
    Infineon Technologies AGMOSFET N-CH200V 15.2A OPTIMOS TDSON8 EP, PK1000
    • 10:£1.0920
    • 50:£0.9610
    • 250:£0.7530
    • 500:£0.6620
    • 1250:£0.5430
    BSC900N20NS3GATMA1
    DISTI # 9064400P
    Infineon Technologies AGMOSFET N-CH200V 15.2A OPTIMOS TDSON8 EP, RL5650
    • 50:£0.9610
    • 250:£0.7530
    • 500:£0.6620
    • 1250:£0.5430
    BSC900N20NS3GATMA1
    DISTI # 2443372RL
    Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant
    0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2100
    • 2500:$1.1300
    • 5000:$1.0900
    BSC900N20NS3GATMA1
    DISTI # 2443372
    Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant
    0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2100
    • 2500:$1.1300
    • 5000:$1.0900
    BSC900N20NS3GATMA1
    DISTI # 2443372
    Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TDSON-8
    RoHS: Compliant
    0
    • 5:£1.1000
    • 25:£0.9710
    • 100:£0.8030
    • 250:£0.7610
    • 500:£0.6690
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    Availability
    Stock:
    Available
    On Order:
    1991
    Enter Quantity:
    Current price of BSC900N20NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.54
    $1.54
    10
    $1.31
    $13.10
    100
    $1.05
    $105.00
    500
    $0.92
    $459.50
    1000
    $0.76
    $761.00
    2500
    $0.71
    $1 772.50
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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