IXTY3N60P

IXTY3N60P
Mfr. #:
IXTY3N60P
Manufacturer:
IXYS
Description:
Darlington Transistors MOSFET 3 Amps 600V 3 Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXTY3N60P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
Transistors - FETs, MOSFETs - Single
Series
IXTY3N60
Packaging
Tube
Unit-Weight
0.012346 oz
Mounting-Style
SMD/SMT
Tradename
PolarHV
Package-Case
TO-252-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
70 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
22 ns
Rise-Time
25 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
3 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5.5 V
Rds-On-Drain-Source-Resistance
2.9 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
58 ns
Typical-Turn-On-Delay-Time
25 ns
Qg-Gate-Charge
9.8 nC
Forward-Transconductance-Min
2.2 S
Channel-Mode
Enhancement
Tags
IXTY3, IXTY, IXT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 2.9 Ohm 70 W Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 600V 3A 3-Pin(2+Tab) DPAK
***nell
MOSFET, N, D-PAK; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:3A; Resistance, Rds On:2.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:DPAK; Termination Type:SMD; Capacitance, Ciss Typ:411pF; Charge, Gate N-channel:9.8nC; Pins, No. of:3; Power, Pd:70W; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:600V; Time, trr Max:500ns
***et
Trans MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R
***ical
600V N-CHANNEL ENHANCEMENT MODE MOSFET
***i-Key
MOSFET BVDSS: 501V 650V TO252 T&
***ineon SCT
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***Yang
Transistor MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R - Tape and Reel
***ark
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 2.3A 3-Pin TO-252 T/R
***ronik
N-CH 600V 2,3A 2100mOhm TO252
***emi
N-Channel QFET® MOSFET 600V, 2.8A, 2.5Ω
***nsix Microsemi
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ical
MOSFET 600V, NCH MOSFET
***i-Key
MOSFET N-CH 600V 2.8A DPAK
***el Electronic
IC SUPERVISOR 1 CHANNEL 5SSOP
***ure Electronics
Single N-Channel 500 V 2.2 Ohm 135 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
***ineon SCT
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***icroelectronics
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
***ure Electronics
N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part # Mfg. Description Stock Price
IXTY3N60P
DISTI # IXTY3N60P-ND
IXYS CorporationMOSFET N-CH 600V 3A D-PAK
RoHS: Compliant
Min Qty: 70
Container: Tube
Limited Supply - Call
  • 70:$1.2936
IXTY3N60P
DISTI # 747-IXTY3N60P
IXYS CorporationMOSFET 3 Amps 600V 3 Rds
RoHS: Compliant
2970
  • 1:$1.5000
  • 10:$1.3500
  • 25:$1.1800
  • 50:$1.1000
  • 100:$1.0900
  • 250:$0.8820
  • 500:$0.8460
  • 1000:$0.7010
  • 2500:$0.5880
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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of IXTY3N60P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.88
$0.88
10
$0.84
$8.38
100
$0.79
$79.38
500
$0.75
$374.85
1000
$0.71
$705.60
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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