IXFN420N10T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Chassis Mount

Package / Case:

SOT-227-4

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

420 A

Rds On - Drain-Source Resistance:

2.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

670 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

1070 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Product:

GigaMOS HiPerFET

Series:

IXFN420N10

Transistor Type:

1 N-Channel

Type:

GigaMos Trench HiperFet Power MOSFET

Brand:

IXYS

Forward Transconductance - Min:

110 S

Fall Time:

255 ns

Product Type:

MOSFET

Rise Time:

155 ns

Factory Pack Quantity:

10

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

115 ns

Typical Turn-On Delay Time:

47 ns

Unit Weight:

1.058219 oz

Tags

IXFN4, IXFN, IXF