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IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2
Mfr. #:
IPB80N04S2H4ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_30/40V
Lifecycle:
New from this manufacturer.
Datasheet:
IPB80N04S2H4ATMA2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N04S2H4ATMA2 DatasheetIPB80N04S2H4ATMA2 Datasheet (P4-P6)IPB80N04S2H4ATMA2 Datasheet (P7-P9)
ECAD Model:
More Information:
IPB80N04S2H4ATMA2 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
3.2 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
103 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
4.4 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
9.25 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
-
Fall Time:
22 ns
Product Type:
MOSFET
Rise Time:
63 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
46 ns
Typical Turn-On Delay Time:
23 ns
Part # Aliases:
IPB80N04S2-H4 SP001058130
Unit Weight:
0.139332 oz
Tags
IPB80N04S2H, IPB80N04S2, IPB80N04, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Japan
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) TO-263
***et
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 40V 80A TO263-3
***ronik
N-CH 40V 80A 3.7mOHM AECQ TO263
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Ultra low Rds(on); 100% Avalanche tested; Green product (RoHS compliant) | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Part # Mfg. Description Stock Price
IPB80N04S2H4ATMA2
DISTI # 27074094		Infineon Technologies AGTrans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R1000
  • 1000:$1.5906
IPB80N04S2H4ATMA2
DISTI # IPB80N04S2H4ATMA2-ND		Infineon Technologies AGMOSFET N-CHANNEL_30/40V
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.8371
IPB80N04S2H4ATMA2
DISTI # V36:1790_09156928		Infineon Technologies AGTrans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$1.4560
  • 500000:$1.4570
  • 100000:$1.4980
  • 10000:$1.5530
  • 1000:$1.5620
IPB80N04S2H4ATMA2
DISTI # IPB80N04S2H4ATMA2		Infineon Technologies AGTrans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N04S2H4ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$1.4900
  • 4000:$1.5900
  • 6000:$1.5900
  • 2000:$1.6900
  • 1000:$1.7900
IPB80N04S2H4ATMA2
DISTI # IPB80N04S2H4ATMA2		Infineon Technologies AGTrans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N04S2H4ATMA2)
Min Qty: 253
Container: Bulk		Americas - 0
  • 1265:$1.1900
  • 2530:$1.1900
  • 506:$1.2900
  • 759:$1.2900
  • 253:$1.3900
IPB80N04S2H4ATMA2
DISTI # IPB80N04S2H4-ATMA2		Infineon Technologies AGTrans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N04S2H4-ATMA2)
Min Qty: 278
Container: Bulk		Americas - 0
  • 1390:$1.0900
  • 2780:$1.0900
  • 278:$1.1900
  • 556:$1.1900
  • 834:$1.1900
IPB80N04S2H4ATMA2
DISTI # IPB80N04S2-H4ATMA2		Infineon Technologies AGTrans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N04S2-H4ATMA2)
Min Qty: 278
Container: Bulk		Americas - 0
  • 1390:$1.0900
  • 2780:$1.0900
  • 278:$1.1900
  • 556:$1.1900
  • 834:$1.1900
IPB80N04S2H4ATMA2
DISTI # SP001058130		Infineon Technologies AGTrans MOSFET N-CH 40V 80A 3-Pin TO-263 T/R (Alt: SP001058130)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.3900
  • 4000:€1.5900
  • 6000:€1.5900
  • 2000:€1.7900
  • 1000:€2.1900
IPB80N04S2H4ATMA2
DISTI # 726-IPB80N04S2H4ATM2		Infineon Technologies AGMOSFET N-CHANNEL_30/40V
RoHS: Compliant		969
  • 1:$2.8200
  • 10:$2.3900
  • 100:$2.0800
  • 250:$1.9700
  • 500:$1.7700
  • 1000:$1.4900
  • 2000:$1.4200
  • 5000:$1.3600
IPB80N04S2H4ATMA2Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		624
  • 1000:$1.3000
  • 500:$1.3700
  • 100:$1.4300
  • 25:$1.4900
  • 1:$1.6000
IPB80N04S2H4-ATMA2Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant		1000
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
IPB80N04S2-H4ATMA2Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant		15000
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
IPB80N04S2H4ATMA2
DISTI # IPB80N04S2H4		Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,80A,300W,PG-TO263-3961
  • 100:$1.8600
  • 25:$2.0700
  • 5:$2.3400
  • 1:$2.6000
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 USB Interface IC Two-Port USB 2.0 Hub 48-HTQFP -40 to 85
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OMO.#: OMO-DR73-1R5-R

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573300D00000G

Mfr.#: 573300D00000G

OMO.#: OMO-573300D00000G

 Heat Sinks Surface Mount Stamped Heatsink for D2Pak, TO-263 for D2PAK, TO-263, Horizontal Mounting, 16 n Thermal Resistance, Bulk Packaging, 26.16mm
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OMO.#: OMO-TEC-3-4821WI

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Mfr.#: AS0805KKX7R9BB104

OMO.#: OMO-AS0805KKX7R9BB104

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 10% 50V AEC-Q200
UE27-AE54-100

Mfr.#: UE27-AE54-100

OMO.#: OMO-UE27-AE54-100-393

 Conn USB Type A RCP 4 POS Solder ST Thru-Hole 4 Terminal 1 Port
TUSB4020BIPHPR

Mfr.#: TUSB4020BIPHPR

OMO.#: OMO-TUSB4020BIPHPR-TEXAS-INSTRUMENTS

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573300D00000G

Mfr.#: 573300D00000G

OMO.#: OMO-573300D00000G-AAVID-THERMALLOY

 Heat Sink Passive D2 PAK/TO-263 SMD
Availability
Stock:
969
On Order:
2952
Enter Quantity:
Current price of IPB80N04S2H4ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.82
$2.82
10
$2.39
$23.90
100
$2.08
$208.00
250
$1.97
$492.50
500
$1.77
$885.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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