TN6707A

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-226-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

100 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

1.2 A

Gain Bandwidth Product fT:

50 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

250

Height:

7.87 mm

Length:

4.7 mm

Packaging:

Bulk

Width:

3.93 mm

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

1.2 A

DC Collector/Base Gain hfe Min:

40

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1500

Subcategory:

Transistors

Unit Weight:

0.012311 oz

Tags

TN670, TN67, TN6