IGT60R070D1ATMA1

Mfr. #:: IGT60R070D1ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET 600V CoolGaN Power Transistor
Lifecycle:: New from this manufacturer.
Datasheet:: IGT60R070D1ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IGT60R070D1ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: GaN

Mounting Style:: SMD/SMT

Package / Case:: PG-HSOF-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 31 A

Rds On - Drain-Source Resistance:: 70 mOhms

Vgs th - Gate-Source Threshold Voltage:: 0.9 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 5.8 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolGaN

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 13 ns

Product Type:: MOSFET

Rise Time:: 8 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 13 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: SP001300364

Tags: IGT60, IGT6, IGT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGT60R070D1ATMA1 More Information

CoolGaN™ Gallium Nitride HEMTs: Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.

Market price

Part #	Mfg.	Description	Stock	Price
IGT60R070D1ATMA1 DISTI # V72:2272_22710692	Infineon Technologies AG	IGT60R070D1ATMA1	3961	3000:$15.3900 1000:$15.4000 250:$15.4100 100:$15.4200 25:$19.6300 10:$20.0500 1:$22.0400
IGT60R070D1ATMA1 DISTI # V36:1790_22710692	Infineon Technologies AG	IGT60R070D1ATMA1	0	1000000:$13.4800 200000:$14.0500 20000:$15.1900 2000:$15.3900
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1CT-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8HSOF RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	609In Stock	500:$17.2689 100:$19.0208 10:$22.2740 1:$24.1500
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1DKR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8HSOF RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	609In Stock	500:$17.2689 100:$19.0208 10:$22.2740 1:$24.1500
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1TR-ND	Infineon Technologies AG	IC GAN FET 600V 60A 8HSOF RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$15.3890
IGT60R070D1ATMA1 DISTI # 32361397	Infineon Technologies AG	IGT60R070D1ATMA1	3961	3000:$15.3900 1000:$15.4000 250:$15.4100 100:$15.4200 25:$19.6300 10:$20.0500 1:$22.0400
IGT60R070D1ATMA1 DISTI # SP001300364	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 8-Pin HSOF (Alt: SP001300364) RoHS: Compliant Min Qty: 2000	Europe - 100	20000:€12.7900 12000:€13.6900 8000:€14.7900 4000:€15.3900 2000:€15.9900
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 8-Pin HSOF - Tape and Reel (Alt: IGT60R070D1ATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$14.6900 12000:$14.8900 8000:$15.3900 4000:$15.9900 2000:$16.5900
IGT60R070D1ATMA1 DISTI # 84AC1771	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes	1992	1000:$14.0300 500:$16.1300 250:$16.9500 100:$17.7700 50:$18.8200 25:$19.8800 10:$20.8100 1:$22.5500
IGT60R070D1ATMA1 DISTI # 726-IGT60R070D1ATMA1	Infineon Technologies AG	MOSFET 600V CoolGaN Power Transistor RoHS: Compliant	2160	1:$22.3300 5:$22.1000 10:$20.6000 25:$19.6800 100:$17.5900 250:$16.7800 500:$15.9700 1000:$13.8900
IGT60R070D1ATMA1 DISTI # IGT60R070D1ATMA1	Infineon Technologies AG	Transistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W	5	10:$22.5500 3:$25.5900 1:$28.4100
IGT60R070D1ATMA1 DISTI # 2981532	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W RoHS: Compliant	1992	2000:$23.1500 500:$25.6600 100:$26.5000 50:$28.9100 1:$31.8100 10:$31.8100
IGT60R070D1ATMA1 DISTI # 2981532	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, 150DEG C, 125W	1974	100:£13.6900 50:£14.5100 10:£15.3200 5:£17.2000 1:£17.3800
IGT60R070D1ATMA1 DISTI # XSKDRABV0044851	Infineon Technologies AG	DFlip-Flop,4000/14000/40000Series,2-Func,PositiveEdgeTriggered,1-Bit,ComplementaryOutput, CMOS,PDSO14 RoHS: Compliant	80 in Stock0 on Order	80:$20.2700 33:$21.7200

Related products

Image	Part #	Description
	Mfr.#: IGT60R190D1SATMA1 OMO.#: OMO-IGT60R190D1SATMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IGO60R070D1AUMA1 OMO.#: OMO-IGO60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IGOT60R070D1AUMA1 OMO.#: OMO-IGOT60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IGLD60R070D1AUMA1 OMO.#: OMO-IGLD60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA	MOSFET MOSFET 600VDC 190mohm X-GaN
	Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR	MOSFET 650V 30A E-Mode GaN
	Mfr.#: 1EDF5673FXUMA1 OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES	IC DRIVER IC GAN DSO-16-11
	Mfr.#: LMG3411R070RWHT OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS	600-V 70m GaN with integrated driver and cycle-by-cycle overcurrent protection
	Mfr.#: IGOT60R070D1AUMA1 OMO.#: OMO-IGOT60R070D1AUMA1-INFINEON-TECHNOLOGIES	IC GAN FET 600V 60A 20DSO
	Mfr.#: GS66508T-E02-MR OMO.#: OMO-GS66508T-E02-MR-1190	MOSFET 650V 30A E-Mode GaN

Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IGT60R070D1ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$22.33~~; ~~$22.33~~

5: ~~$22.10~~; ~~$110.50~~

10: ~~$20.60~~; ~~$206.00~~

25: ~~$19.68~~; ~~$492.00~~

100: ~~$17.59~~; ~~$1 759.00~~

250: ~~$16.78~~; ~~$4 195.00~~

500: ~~$15.97~~; ~~$7 985.00~~

1000: ~~$13.89~~; ~~$13 890.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IGT60R070D1ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes